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High-quality gallium oxide wafer preparation method and application

A gallium oxide, high-quality technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of small chip size, low chip quality, chip breakage, etc., to achieve stress relief, high chip quality, The effect of regulating resistivity

Active Publication Date: 2017-05-31
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the crystal has two dissociation planes of 103.8°, and the fracture of the wafer is prone to occur in the simple mechanical peeling process, the wafer size is small, and the wafer quality is not high, such as figure 1 shown

Method used

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  • High-quality gallium oxide wafer preparation method and application
  • High-quality gallium oxide wafer preparation method and application
  • High-quality gallium oxide wafer preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A method for preparing a high-quality gallium oxide wafer, comprising the following steps:

[0045] (1) Bulk single crystal pretreatment

[0046] Cut the grown high-quality gallium oxide or doped gallium oxide single crystal into 7×5×3mm 3 For the sample, the larger surface of the sample is the (100) plane, and a bulk single crystal is obtained. The cut bulk single crystal is placed in an atmosphere furnace for annealing at an annealing temperature of 900° C. for 5 hours, and the atmosphere is flowing hydrogen.

[0047] (2) Mechanical peeling

[0048] Scratch the side of the cut bulk single crystal with a diamond knife, put it in 25°C water, and then use a sharp blade to cut along the (100) plane from the scratch, and slowly separate the wafer from the bulk single crystal , to obtain high-quality gallium oxide wafers. Chip such as figure 2 shown. pass figure 2 It can be seen that the wafer obtained by mechanical peeling after pretreatment will not break, the wa...

Embodiment 2

[0052] A method for preparing a high-quality gallium oxide wafer, comprising the following steps:

[0053] (1) Bulk single crystal pretreatment

[0054] Cut the grown high-quality gallium oxide or doped gallium oxide single crystal into 10×6×3mm 3 For the sample, the larger surface of the sample is the (100) plane, and a bulk single crystal is obtained. The cut bulk single crystal is placed in an atmosphere furnace for annealing, the annealing temperature is 1000°C, the annealing time is 15h, and the atmosphere is flowing argon.

[0055] (2) Mechanical peeling

[0056] Scratch the side or edge of the annealed crystal with a diamond knife, put it into 20°C water, and then use a sharp blade to cut along the (100) plane from the scratch, and then slowly remove the wafer from the bulk A single crystal is separated to obtain a high-quality gallium oxide wafer.

Embodiment 3

[0058] A method for preparing a high-quality gallium oxide wafer, comprising the following steps:

[0059] (1) Bulk single crystal pretreatment

[0060] Cut the grown high-quality Sn-doped n-type gallium oxide single crystal into 25×20×3mm 3 For the sample, the larger surface of the sample is the (100) plane, and a bulk single crystal is obtained. The cut bulk single crystal is placed in an atmosphere furnace for annealing, the annealing temperature is 1000° C., the annealing time is 40 h, and the atmosphere is flowing argon.

[0061] (2) Mechanical peeling

[0062] Cut the bulk single crystal, use a diamond knife to scratch the side of the annealed crystal, put it in 28°C water, then use a sharp blade to cut along the (100) plane from the scratch, and then slowly remove the wafer from the bulk single crystal On separation, high-quality gallium oxide wafers are obtained.

[0063] (3) Wafer post-processing

[0064] The obtained wafer was annealed at 800° C. under argon for...

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Abstract

The present invention relates to a high-quality gallium oxide wafer preparation method and application. The method comprises the steps: (1) cutting gallium oxide single crystal to obtain a body mass single crystal, performing annealing process in a special atmosphere, wherein the annealing temperature is 800-1200 DEG C, the annealing time is 5-100h, and the annealing atmosphere is argon or hydrogen; and (2) scratching the side surface or the side chamfered edge of the body mass single crystal after annealing process, putting the body mass single crystal into water, cutting apart the body mass single crystal from the scratching position by employing a blade, slowly separating the wafer from the body mass single crystal, and obtaining a high-quality gallium oxide wafer. The high-quality gallium oxide wafer preparation method is simple in operation, easily realizes the mechanical exfoliation of a gallium oxide wafer, an obtained gallium oxide wafer cannot be broken, the size of the wafer is large, and the quality of the wafer is high.

Description

technical field [0001] The invention relates to a preparation method and application of a high-quality gallium oxide wafer, belonging to the technical field of crystals and devices. Background technique [0002] β-Ga 2 o 3 It is a semiconductor material with a direct band gap, and the band gap is E g =4.8eV, it is a new type of ultra-wide bandgap semiconductor. β-Ga 2 o 3 The UV cut-off edge of the crystal can reach 260nm, and the transmittance in the ultraviolet band is high, which can meet the requirements of the new generation of optoelectronic materials for the short wavelength working range. In addition, the crystal has a large band gap, high breakdown field strength, strong radiation resistance, and good physical and chemical stability, which is very suitable for the development of high withstand voltage and high power semiconductor devices. [0003] The semiconductor field has very high requirements on the surface quality of the wafer. The surface quality of the...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/24H01L21/02
CPCH01L21/02008H01L29/06H01L29/24
Inventor 陶绪堂贾志泰穆文祥尹延如张健
Owner SHANDONG UNIV
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