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Method for homoepitaxially growing gallium nitride, gallium nitride material and application thereof

A homoepitaxial and epitaxial growth technology, applied in the field of gallium nitride materials obtained by growth, can solve the problems of difficult epitaxial growth, high defect density, large grain boundaries, etc.

Active Publication Date: 2019-06-04
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the lack of dangling bonds on the surface of graphene, direct epitaxial growth is difficult, and the grown semiconductor material has a large number of grain boundaries, stacking faults, dislocations, etc., and the defect density is much higher than that of materials that can be applied to conventional devices.

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  • Method for homoepitaxially growing gallium nitride, gallium nitride material and application thereof
  • Method for homoepitaxially growing gallium nitride, gallium nitride material and application thereof
  • Method for homoepitaxially growing gallium nitride, gallium nitride material and application thereof

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preparation example Construction

[0041] In some embodiments, the preparation method of the gallium nitride material includes:

[0042] GaN substrates are provided;

[0043] setting a single layer of graphene as an insertion layer on the gallium nitride substrate;

[0044] GaN material is homoepitaxially grown on the substrate carrying the single-layer graphene.

[0045] In some embodiments, the preparation method of the gallium nitride material includes: transferring a single-layer graphene onto the substrate as the insertion layer; or directly growing a single-layer graphite on the substrate ene as the intercalation layer.

[0046] Preferably, the preparation method of the gallium nitride material comprises: epitaxially growing a low-temperature layer of gallium nitride on the substrate carrying the single-layer graphene, wherein the growth temperature used is 500-800°C, and then GaN materials are epitaxially grown at a high temperature of 1000-1100 °C.

[0047] Another aspect of the embodiments of the p...

Embodiment 1

[0051] 1. Use a gallium nitride template (4 micron thick gallium nitride grown on a sapphire substrate by MOCVD) as the substrate.

[0052] 2. Transfer or direct growth of single-layer graphene on GaN.

[0053] 3. Since gallium nitride will decompose at 850°C, MOCVD equipment is used to first grow the low-temperature layer of gallium nitride at a low temperature of 600°C, and the growth V / III is 3000 pure hydrogen as the carrier gas; then nitrogen is grown at a high temperature of 1040°C Gallium nitride, the growth V / III is 2000, pure hydrogen is used as the carrier gas, and the gallium nitride material is finally obtained after growth, please refer to figure 1 shown.

[0054] The gallium nitride material obtained in this embodiment is tested for performance and found that it is a single crystal material (see Figure 2a and Figure 2b shown), and aligned with the underlying GaN orientation. The single-layer graphene is only 3-5 angstroms at the gallium nitride interface, a...

Embodiment 2

[0056] 1. Use self-supporting gallium nitride (thickness of 350 micron gallium nitride) as the substrate.

[0057] 2. Transfer or direct growth of single-layer graphene on GaN.

[0058] 3. Since gallium nitride will decompose at 850°C, HVPE equipment is used to first grow the low-temperature layer of gallium nitride at a low temperature of 600°C, the growth V / III is 30, and the nitrogen-hydrogen ratio is 1:1 as the carrier gas; then Gallium nitride is grown at a high temperature of 1040°C, the growth V / III is 20, and the ratio of nitrogen to hydrogen is 1:1 as the carrier gas. After growth, gallium nitride material is finally obtained. Please refer tofigure 1 shown.

[0059] The gallium nitride material obtained in this embodiment is tested for performance and found that it is a single crystal material (see Figure 2a and Figure 2b shown), and aligned with the underlying GaN orientation. The single-layer graphene is only 3-5 angstroms at the gallium nitride interface, and ...

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Abstract

The present invention discloses a method for homoepitaxially growing a gallium nitride. The method comprises a step of providing a gallium nitride substrate, a step of transferring or directly growinga single layer of graphene as an insertion layer on the substrate, and a step of homoepitaxial growing the gallium nitride. In the present invention, the single layer of graphene is used as an insertion layer and the gallium nitride is homoepitaxially grown, a large-sized homoepitaxial gallium nitride single-crystal material can be obtained, the grown gallium nitride is easy to mechanically peeloff, and a peeled substrate can be repeatedly used.

Description

technical field [0001] The present invention relates to a method for homoepitaxially growing gallium nitride, in particular to a method for homoepitaxially growing gallium nitride by using single-layer graphene as an intercalation layer, as well as the grown gallium nitride material and its application. The invention belongs to the technical field of semiconductor optoelectronic materials and devices. Background technique [0002] In 2004, British scientists discovered that the sp 2 Graphene, a new type of two-dimensional atomic crystal composed of hybrid-connected monoatomic layers, whose basic structural unit is the most stable six-membered benzene ring in organic materials, is currently the most ideal two-dimensional nanomaterial. Single-layer graphene refers to graphite with only one carbon atomic layer thickness, and C-C is connected by covalent bonds to form a honeycomb structure. In graphene, each carbon atom is connected to other 3 carbon atoms through a strong σ b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/00H01L33/12H01L33/32
Inventor 徐俞王建峰徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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