Heat dissipation structure and processing technology of single tube igbt

A technology of heat dissipation structure and processing technology, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., and can solve the problems that the ambient temperature of the coolant affects the structural design of the heat exchanger, reduces operating safety, and is not easy to clean. Achieve excellent in-plane thermal conductivity, improve longitudinal conductivity, and meet heat dissipation requirements

Active Publication Date: 2018-11-20
HUANGSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, when the air is cooled, the dust accumulation in the fan is not easy to clean, the noise is large, the operation safety is reduced, and the volume and cost will increase accordingly; the heat transfer efficiency of phase change cooling is high, but Freon or other fluorine insulating liquid is often used as the working medium. It has a certain impact on the environment, and the structure is more complicated, and maintenance is inconvenient; while single-phase liquid cooling is easy to control, and the working fluid used is more environmentally friendly, but there are also problems such as the influence of the coolant by the ambient temperature and the structural design of the heat exchanger.

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  • Heat dissipation structure and processing technology of single tube igbt
  • Heat dissipation structure and processing technology of single tube igbt
  • Heat dissipation structure and processing technology of single tube igbt

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Embodiment Construction

[0038] The present invention will be further described below in conjunction with drawings and embodiments.

[0039] The invention proposes a heat dissipation structure of a single-tube IGBT, which generally includes a substrate, a chip, a heat sink, a graphene heat dissipation layer and a graphene-based interconnection material. Wherein the single-layer graphene film prepared by chemical vapor deposition is used as the heat dissipation layer for the fronts of the IGBT chip 11 and the FRD chip 21, see figure 1 and figure 2 . figure 1 The upper surface of the middle IGBT chip 11 has an IGBT chip emitter 12 and a gate 13 , and the upper surface of the IGBT chip emitter 12 is a first graphene thin film heat dissipation layer 10 . figure 2 The FRD chip emitter 22 is arranged on the upper surface of the middle FRD chip 21 , and the second graphene film heat dissipation layer 20 is formed on the upper surface thereof.

[0040] The few-layer graphene powder prepared by the redox ...

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Abstract

The invention relates to a heat dissipation structure and processing technology for a single-tube IGBT (Insulated Gate Bipolar Transistor). The structure comprises a substrate, a chip, heat sink, a graphene heat dissipation layer and a graphene-based interconnection material. Single-layer graphene thin film prepared by a chemical vapor deposition method is taken as the heat dissipation layer on the front face of the chip; through exertion of the excellent intra-plane heat conduction performance of the heat dissipation layer, local hotspot heat of a single-tube IGBT device is horizontally transmitted to the heat sink; few-layer graphene powder prepared by an oxidation-reduction method or a solvent stripping method is filled into multi-mode silver particle electric-conduction adhesive; the electric and heat conduction performance of the adhesive is enhanced; the adhesive is taken as the interconnection material between the chip and the substrate, and between the heat sink and the substrate; the longitudinal conduction capability of the heat from the chip to the substrate is improved; the heat conduction path is shortened through adoption of a flip-chip interconnection mode; the heat dissipation performance of the integrated structure is enhanced; heat dissipation is carried out on the local high heat flux hotspots effectively; the highest temperature of the single-tube IGBT device is reduced; and the service life of the device is prolonged.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a heat dissipation structure and processing technology of a single-tube IGBT. Background technique [0002] As the core device of energy conversion and transmission, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has become the mainstream of power semiconductor devices, and is used in rail transportation, smart grid, aerospace, electric vehicles and new energy equipment and other fields extremely wide. With the development of modern power electronics technology, the current level of single-tube IGBT continues to increase, and the temperature rise of the PN junction will make the components very easy to fail. Therefore, the thermal management of IGBT is extremely important. [0003] Traditional heat dissipation methods include air cooling, phase change cooling such as heat pipes, and single-phase liquid cooling. Each has its own adv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373H01L21/50
CPCH01L21/50H01L23/373H01L2224/48091H01L2224/73265H01L2924/00014
Inventor 鲍婕宁仁霞陈珍海何聚焦铮王政留
Owner HUANGSHAN UNIV
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