Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multistage Magnetic Field Arc Ion Plating Method for Positive Porous Baffle Lined with Positive Bias

A technology of arc ion plating and positive bias, which is applied in the field of material surface treatment, can solve the problems of large particle defects and low arc plasma transmission efficiency, improve crystal structure and stress state, avoid large particle defects, and thin film crystal structure more effect

Active Publication Date: 2019-08-16
ZHENGZHOU UNIVERSITY OF AERONAUTICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the traditional arc ion plating method using low-melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the arc plasma transmission efficiency caused by the curved magnetic filter technology. Low-level problems, combined with the multi-level magnetic field filtering method and the composite effect of the mechanical barrier shielding of the porous baffle's own structure and the positive bias electric field attraction, at the same time ensure that the arc plasma passes through the porous baffle and the multi-hole with high transmission efficiency. The high-grade magnetic field filter device enables continuous and dense preparation of high-quality thin films on the surface of the workpiece under the condition of applying negative bias voltage. The adverse effects of particle defects on film growth and performance, a multi-stage magnetic field arc ion plating method lined with positive bias porous baffles was proposed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multistage Magnetic Field Arc Ion Plating Method for Positive Porous Baffle Lined with Positive Bias
  • Multistage Magnetic Field Arc Ion Plating Method for Positive Porous Baffle Lined with Positive Bias

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0015] Specific implementation mode one: the following combination figure 1 and 2 This embodiment is described. The device used in the multi-stage magnetic field arc ion plating method with a positive bias porous baffle plate in this embodiment includes a bias power source 1, an arc power source 2, an arc ion plating target source 3, and a multi-stage magnetic field device 4 , multi-stage magnetic field power supply 5, lining positive bias porous type baffle device 6, positive bias power supply 7, sample stage 8, bias power supply waveform oscilloscope 9 and vacuum chamber 10;

[0016] The method includes the following steps:

[0017] Step 1. Place the substrate workpiece to be processed on the sample stage 8 in the vacuum chamber 10, and insulate the lining positive bias porous type baffle device 6 from the vacuum chamber 10 and the multi-stage magnetic field device 4. The workpiece and the sample stage 8 Connect the negative output end of the bias power supply 1, the arc i...

specific Embodiment approach 2

[0026] Specific embodiment two: the difference between this embodiment and embodiment one is that the method also includes:

[0027] Step 3: Thin films can be deposited by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulsed cathodic arc with DC bias, pulse bias or DC pulse composite bias to prepare pure metal films , compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios, and the others are the same as Embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a lining positive bias porous baffle multi-level magnetic field arc ion plating method, belongs to the technical field of material surface treatment and aims at achieving the aim about removal of macroparticles and deposition ions polluting the pipe inner wall in a multi-level magnetic field filtering device and solving the problem about losses of arc plasmas in the transmitting process. The method comprises the steps that firstly, a workpiece to be coated is placed on a sample table in a vacuum chamber, a related power source is turned on, and an outer water cooling system is started; secondly, film deposition is conducted, when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of working gas is conducted, the air pressure is adjusted, a coating power source is started, and meanwhile a bias power source is utilized for attracting arc plasmas at the position of an outlet and conducting energy adjustment; and through stopping and shielding of a lining positive bias porous baffle device, the inhibiting effect of a positive bias electric field and the filtering effect of a multi-level magnetic field, the macroparticle defect is effectively overcome, the transmission efficiency of the arc plasmas is guaranteed, needed technology parameters are set, and film preparing is conducted.

Description

technical field [0001] The invention relates to a multi-stage magnetic field arc ion plating method for a positive bias porous type baffle on the inner lining, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles pe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/32
CPCC23C14/325
Inventor 魏永强宗晓亚刘学申刘源侯军兴张华阳蒋志强冯宪章
Owner ZHENGZHOU UNIVERSITY OF AERONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products