Multistage Magnetic Field Arc Ion Plating Method for Positive Porous Baffle Lined with Positive Bias
A technology of arc ion plating and positive bias, which is applied in the field of material surface treatment, can solve the problems of large particle defects and low arc plasma transmission efficiency, improve crystal structure and stress state, avoid large particle defects, and thin film crystal structure more effect
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specific Embodiment approach 1
[0015] Specific implementation mode one: the following combination figure 1 and 2 This embodiment is described. The device used in the multi-stage magnetic field arc ion plating method with a positive bias porous baffle plate in this embodiment includes a bias power source 1, an arc power source 2, an arc ion plating target source 3, and a multi-stage magnetic field device 4 , multi-stage magnetic field power supply 5, lining positive bias porous type baffle device 6, positive bias power supply 7, sample stage 8, bias power supply waveform oscilloscope 9 and vacuum chamber 10;
[0016] The method includes the following steps:
[0017] Step 1. Place the substrate workpiece to be processed on the sample stage 8 in the vacuum chamber 10, and insulate the lining positive bias porous type baffle device 6 from the vacuum chamber 10 and the multi-stage magnetic field device 4. The workpiece and the sample stage 8 Connect the negative output end of the bias power supply 1, the arc i...
specific Embodiment approach 2
[0026] Specific embodiment two: the difference between this embodiment and embodiment one is that the method also includes:
[0027] Step 3: Thin films can be deposited by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulsed cathodic arc with DC bias, pulse bias or DC pulse composite bias to prepare pure metal films , compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios, and the others are the same as Embodiment 2.
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