Preparation method of oxidization film in surface of silicon carbide

A technology of surface oxidation and silicon carbide, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of SiCMOSFET device performance degradation, complex oxidation mechanism, etc., to reduce the interface state density, the process is simple, and the quality is improved. Effect

Active Publication Date: 2017-05-03
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to the presence of C, the oxidation mechanism of silicon carbide is much more complicated than that of silicon, and the interface state density of silicon carbide / silicon dioxide is much higher than that of silicon / silicon dioxide interface, which seriously degrades the performance of SiC MOSFET devices.

Method used

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  • Preparation method of oxidization film in surface of silicon carbide
  • Preparation method of oxidization film in surface of silicon carbide
  • Preparation method of oxidization film in surface of silicon carbide

Examples

Experimental program
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Effect test

Embodiment 1

[0031] A method for preparing an oxide film on a silicon carbide surface, the method comprising the steps of:

[0032] 1) Clean the silicon carbide material 10, the silicon carbide material 10 includes a substrate 11 and an epitaxial film 12, the substrate 11 in the silicon carbide material 10 is n-type 4H-SiC, the thickness is about 380 μm, n-type doped impurities Nitrogen (N), the doping concentration is about 5×10 18 cm -3 ; The epitaxial film 12 in the silicon carbide material 10 is n-type 4H-SiC with a thickness of about 12 μm, and the n-type doped impurity is nitrogen (N), and the doping concentration is about 8×10 15 cm -3 ;

[0033] The silicon carbide material 10 is cleaned by the RCA standard cleaning method, and the specific cleaning steps are as follows:

[0034] (1) Prepare hydrofluoric acid solution (HF:H 2 O=1:10);

[0035] (2) The sample holder is cleaned and dried for use;

[0036] (3) Take the silicon carbide sample 10 and put it on the support, and pu...

Embodiment 2

[0049] A method for preparing an oxide film on a silicon carbide surface, the method comprising the steps of:

[0050]1) Clean the silicon carbide material 10, the silicon carbide material 10 includes a substrate 11 and an epitaxial film 12, the substrate 11 in the silicon carbide material 10 is n-type 4H-SiC, the thickness is about 300 μm, n-type doped impurities Nitrogen (N), the doping concentration is about 5×10 20 cm -3 ; The epitaxial film 12 in the silicon carbide material 10 is n-type 4H-SiC with a thickness of about 15 μm, and the n-type doped impurity is nitrogen (N), and the doping concentration is about 8×10 18 cm -3 ;

[0051] The silicon carbide material 10 is cleaned by the RCA standard cleaning method, and the specific cleaning steps are as follows:

[0052] (1) Prepare hydrofluoric acid solution (HF:H 2 O=1:10);

[0053] (2) The sample holder is cleaned and dried for use;

[0054] (3) Take the silicon carbide sample 10 and put it on the support, and put...

Embodiment 3

[0067] A method for preparing an oxide film on a silicon carbide surface, the method comprising the steps of:

[0068] 1) Clean the silicon carbide material 10, the silicon carbide material 10 includes a substrate 11 and an epitaxial film 12, the substrate 11 in the silicon carbide material 10 is n-type 6H-SiC, the thickness is about 450 μm, n-type doped impurities Nitrogen (N), the doping concentration is about 5×10 18 cm -3 ; The epitaxial thin film 12 in the silicon carbide material 10 is n-type 6H-SiC, the thickness is about 15 μm, the n-type doping impurity is nitrogen (N), and the doping concentration is about 8×10 15 cm -3 ;

[0069] The silicon carbide material 10 is cleaned by the RCA standard cleaning method, and the specific cleaning steps are as follows:

[0070] (1) Prepare hydrofluoric acid solution (HF:H 2 O=1:10);

[0071] (2) The sample holder is cleaned and dried for use;

[0072] (3) Take the silicon carbide sample 10 and put it on the support, and pu...

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Abstract

The invention discloses a preparation method of an oxidization film in a surface of silicon carbide. The method comprises the following steps of 1) cleaning a silicon carbide material (10) containing a substrate (11) and an epitaxial thin film (12); 2) performing oxygen plasma processing on an upper surface of the epitaxial thin film (12); 3) pre-processing a sample (13) obtained in the step 2) in a high temperature; and 4) oxidizing a sample (14) obtained in the step 3) to obtain the oxidization film (15). According to the method, by passivation on the surface of the silicon carbide before formation of the silicon carbide oxidization film, the quality of the silicon carbide oxidization film is improved, and the silicon carbide / silicon dioxide interface state density is reduced; and the method is simple and practical and is suitable for industrial production on a large scale.

Description

technical field [0001] The invention relates to a method for processing semiconductor materials, in particular to a method for preparing an oxide film on the surface of silicon carbide. Background technique [0002] Silicon carbide materials have the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron mobility, excellent physical and chemical stability, and are suitable for high temperature, high frequency, high power and extreme environments. Silicon carbide is the only one that can generate SiO by thermal oxidation 2 The wide bandgap semiconductor of the dielectric layer makes silicon carbide especially suitable for the preparation of various MOS structure devices. [0003] However, due to the presence of C, the oxidation mechanism of silicon carbide is much more complicated than that of silicon, and the interface state density of silicon carbide / silicon dioxide is much higher than that of silicon / silicon di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04
CPCH01L21/045
Inventor 郑柳杨霏王方方李玲李永平刘瑞吴昊钮应喜张文婷王嘉铭桑玲
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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