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Preparation method of stress controllable silicon-based thin film

A silicon-based film and stress technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unobtainable and limited influence of stress, and achieve reduced production cycle, high controllability, and improved material The effect of application range

Inactive Publication Date: 2016-11-30
CHENGDU HIWAFER SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason why a double-layer film or a combination of multi-layer films is used instead of adjusting the thickness or shape of a single-layer film is that, unlike macroscale materials, film thickness changes and shape adjustments in the nanoscale range affect the magnitude of stress Very limited, can't get the desired effect

Method used

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  • Preparation method of stress controllable silicon-based thin film
  • Preparation method of stress controllable silicon-based thin film
  • Preparation method of stress controllable silicon-based thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Preparation of SiN thin film on substrate material Si:

[0038] Use 10wt% HCl deionized aqueous solution to clean the Si substrate and put it into the cavity of a single-frequency PECVD equipment with a frequency of 13.56MHz, and then feed the raw material gas SiH 4 , NH 3 and N 2 , He is evenly introduced into the cavity from the spray hole on the top of the cavity, the temperature in the cavity is set to 250 ° C, the pressure in the cavity is set to 1500 mTorr, the power of the radio frequency source is set to 150 W during the preparation process, and the SiH 4 The flow rate is 400sccm, NH 3 The flow rate is 20sccm, N 2 The flow rate is 0~5000sccm, the He flow rate is 0~5000sccm, the actual flow rate is adjusted according to the flow ratio, the film deposition rate is greater than 20nm / min, the deposition time is 3min, and the N is adjusted from close to 0 2 / He flow ratio to 1, as attached figure 1 N shown 2 / He flow ratio and film stress change trend graph, th...

Embodiment 2

[0042] Preparation of SiN thin films on the substrate material GaAs:

[0043]Use 10wt% HCl deionized aqueous solution to clean the GaAs substrate and put it into the cavity of a single-frequency PECVD equipment with a frequency of 13.56MHz, and then feed the raw material gas SiH 4 , NH 3 and N 2 , He is evenly introduced into the cavity from the spray hole on the top of the cavity, the temperature in the cavity is set to 300°C, the pressure in the cavity is set to 2000mTorr, the power of the radio frequency source is set to 180W during the preparation process, SiH 4 Flow rate is 700sccm, NH 3 The flow rate is 50sccm, N 2 The flow rate is 0~5000sccm, the He flow rate is 0~5000sccm, the film deposition rate is greater than 35nm / min, the deposition time is 5min, and the N is adjusted from close to 0. 2 / He flow ratio to 1, as attached figure 2 N shown 2 / He flow rate ratio and film stress change trend graph (where X-axis is N 2 / He flow ratio, Y-axis is stress) The stress...

Embodiment 3

[0047] Preparation of SiN thin film on substrate material SiC:

[0048] Use 10wt% HCl deionized aqueous solution to clean the SiC substrate and put it into the cavity of a flat-panel single-frequency PECVD equipment with a frequency of 2.45 GHz, and then feed the raw material gas SiH 4 , NH 3 and N 2 , He is evenly introduced into the cavity from the spray hole on the top of the cavity, the temperature in the cavity is set to 350°C, the pressure in the cavity is set to 3000mTorr, the power of the radio frequency source is set to 500W during the preparation process, SiH 4 Flow rate is 700sccm, NH 3 The flow rate is 50sccm, N 2 The flow rate is 0~5000sccm, the He flow rate is 0~5000sccm, the film deposition rate is greater than 30nm / min, the deposition time is 4min, and the N is adjusted from close to 0. 2 / He flow ratio to 10, in the adjustment process, the stress test equipment used to test the stress of different SiN films obtained, the test uses the stress tester of TOHO...

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Abstract

The invention discloses a preparation method of a stress controllable silicon-based thin film. The preparation method comprises a step of enabling raw gas to deposit and grow on a substrate material through a chemical vapor deposition method by using single-frequency PECVD equipment so as to obtain the silicon-based thin film. During the preparation, He and N2 are imported into the raw gas. The preparation method is simple in process and high in controllability, and can be used for preparing the silicon-based thin film which can be adjusted between pressure stress and tension stress in a large range and which is good in uniformity, high in compactness and low in cost in PECVD equipment of a single-frequency radio source.

Description

technical field [0001] The invention relates to the technical field of silicon-based thin films. Background technique [0002] With the continuous expansion of traditional optics, information optics, light and wireless communications and the rapid development of computer technology, vacuum technology, light and microelectronics technology, thin-film optical devices and thin-film electronic devices have been increasingly widely used, such as in semiconductor devices Silicon-based film used as surface passivation, metal layer isolation dielectric, capacitor dielectric and other materials. [0003] Different applications have different requirements for the performance of silicon-based thin films, especially for the stress of the thin film. The nature and magnitude of the stress of the thin film directly affect the performance, yield, stability and reliability of thin film components. Therefore, the preparation of silicon-based films that meet different stress requirements is o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02532H01L21/0262
Inventor 周华芳
Owner CHENGDU HIWAFER SEMICON CO LTD
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