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Pre-treatment and cleaning method of high-voltage diode nickel-plated silicon wafer

A high-voltage diode and silicon chip technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of environmental protection and safety that are difficult to meet the relevant requirements, the emission of trichlorethylene steaming and washing is large, and the cost of use is high. , achieve great cost advantages, less environmental hazards, and less material consumption

Active Publication Date: 2018-12-25
江苏皋鑫电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. High cost of use
Trichlorethylene steaming and washing consumes a lot of chemicals. In recent years, the price of trichlorethylene has risen from a few dollars to more than ten dollars, and the cost of enterprise use has continued to increase.
[0004] 2. The emission of trichlorethylene steaming and washing is large, and it is difficult to meet the relevant requirements for environmental protection and safety

Method used

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  • Pre-treatment and cleaning method of high-voltage diode nickel-plated silicon wafer

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Embodiment Construction

[0031] Below in conjunction with accompanying drawing, content of the present invention will be further described

[0032] As shown in the figure is the process flow chart of the pre-treatment and cleaning method for high-voltage diode nickel-plated silicon wafers.

[0033] Specific implementation process

[0034] 1. Prepare 10% potassium hydroxide solution;

[0035] Weigh 250g of KOH, pour it into the KOH glass square tank, then use a measuring cylinder to measure 2750ml of pure water, pour it in, and stir it fully with a stirring rod to dissolve it.

[0036] 2. Homework preparation;

[0037] 1. Confirm that the liquid volume of the dimethylacetamide ultrasonic tank, ethanol tank, ethanol ultrasonic tank, and running water ultrasonic tank can completely submerge the flower basket with silicon wafers.

[0038] 2. Turn on each ultrasonic switch, and set its power to the "strong" position.

[0039] 3. Put the sandblasted silicon wafers into the flower basket one by one, and ...

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Abstract

The invention discloses a pre-processing cleaning method of a high-voltage diode nickel-plated silicon chip in the machining field of electronic devices. The method comprises the following steps of: 1), preparing an alkaline solution, 2) carrying out DMAC ultrasonic cleaning, 3) carrying out ethanol immersion cleaning, 4) carrying out ethanol ultrasonic cleaning, 5) carrying out pure water ultrasonic cleaning, 6) carrying out three-level water cleaning, 7) carrying out hot alkali processing, and 8) carrying out pure water cleaning. The method has the advantages that the degreasing and sand removing effects are good, the environment is protected, and the cost is lowered.

Description

technical field [0001] The invention relates to a high-voltage diode nickel-plated silicon wafer pretreatment cleaning method in the field of electronic device processing. Background technique [0002] High-voltage diode diffused silicon wafers need to be sandblasted and roughened before electroless nickel plating. Clean the silicon wafers. The existing cleaning process is to use trichlorethylene to steam and wash the silicon chip for a long time, then perform ultrasonic cleaning, and then use acetone to remove the trichlorethylene on the surface of the silicon chip. There are currently problems with the use of trichlorethylene to clean silicon wafers: [0003] 1. The use cost remains high. Trichlorethylene steaming and washing consumes a lot of chemicals. In recent years, the price of trichlorethylene has risen from a few dollars to more than ten dollars, and the cost of use by enterprises has continued to increase. [0004] 2. The amount of trichlorethylene steamed and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02068
Inventor 陈许平
Owner 江苏皋鑫电子有限公司
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