Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A doped photovoltaic thin film material

A photovoltaic thin film and doping technology, applied in photovoltaic power generation, sustainable manufacturing/processing, electrical components, etc., can solve problems affecting the production structure, cost and price cycle of sustainable development of the industrial chain, and achieve increased conduction stability performance, improve connection tightness, and improve the effect of surface energy storage performance

Active Publication Date: 2018-01-23
SHAOXING UNIVERSITY
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, this type of material still needs to improve the photoelectric conversion efficiency and reduce the cost of preparing materials. For example, indium and gallium in CuInGaSe[CIGS] are very scarce in the earth's reserves. If they are mass-produced, their production structure will be significantly affected. Cost and price, and the cycle of sustainable development of the entire industrial chain, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A doped photovoltaic thin film material, in which a carbon-doped silicon dioxide layer and a defect-free doped graphene layer are sequentially arranged on an n-type Si substrate to form a doped photovoltaic thin film material with photovoltaic and photoconductive effects.

[0034] The preparation method of the doped photovoltaic thin film material, its steps are as follows:

[0035] Step 1, configure silica electrophoretic fluid: mix nano-silica, dispersant and alcohol solution, and ultrasonically disperse to obtain electrophoretic fluid;

[0036] Step 2, silicon dioxide film deposition: deposit the electrophoretic solution on the n-type Si substrate to obtain a silicon dioxide film layer;

[0037] Step 3, carbon-doped silicon dioxide layer: coating a thin coating of activated carbon on the surface of the silicon dioxide film layer, and sintering at high temperature to obtain a mixed layer of silicon dioxide and silicon carbide;

[0038] Step 4, graphene coating: Rotat...

Embodiment 2

[0053] A doped photovoltaic thin film material, in which a carbon-doped silicon dioxide layer and a defect-free doped graphene layer are sequentially arranged on an n-type Si substrate to form a doped photovoltaic thin film material with photovoltaic and photoconductive effects.

[0054] The preparation method of the doped photovoltaic thin film material, its steps are as follows:

[0055] Step 1, configure silica electrophoretic fluid: mix nano-silica, dispersant and alcohol solution, and ultrasonically disperse to obtain electrophoretic fluid;

[0056] Step 2, silicon dioxide film deposition: deposit the electrophoretic solution on the n-type Si substrate to obtain a silicon dioxide film layer;

[0057] Step 3, carbon-doped silicon dioxide layer: coating a thin coating of activated carbon on the surface of the silicon dioxide film layer, and sintering at high temperature to obtain a mixed layer of silicon dioxide and silicon carbide;

[0058] Step 4, graphene coating: Rotat...

Embodiment 3

[0073] A doped photovoltaic thin film material, in which a carbon-doped silicon dioxide layer and a defect-free doped graphene layer are sequentially arranged on an n-type Si substrate to form a doped photovoltaic thin film material with photovoltaic and photoconductive effects.

[0074] The preparation method of the doped photovoltaic thin film material, its steps are as follows:

[0075] Step 1, configure silica electrophoretic fluid: mix nano-silica, dispersant and alcohol solution, and ultrasonically disperse to obtain electrophoretic fluid;

[0076] Step 2, silicon dioxide film deposition: deposit the electrophoretic solution on the n-type Si substrate to obtain a silicon dioxide film layer;

[0077] Step 3, carbon-doped silicon dioxide layer: coating a thin coating of activated carbon on the surface of the silicon dioxide film layer, and sintering at high temperature to obtain a mixed layer of silicon dioxide and silicon carbide;

[0078] Step 4, graphene coating: Rotat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a doping type photovoltaic thin film material. A carbon-doped silicon dioxide layer and a defect-free doping type grapheme layer are sequentially arranged on an n type Si substrate, and the doping type photovoltaic thin film material with photovoltaic and photoconduction effects is formed. The prepared photovoltaic thin film material has good semiconductor properties, is low in cost, can be continuously produced on a large scale, and is used for numerous fields of solar cells and the like.

Description

technical field [0001] The invention belongs to the technical field of thin film solar cells, and in particular relates to a doped photovoltaic thin film material. Background technique [0002] The modernization of the world economy has benefited from the extensive application of fossil energy, such as oil, natural gas and coal. Therefore, it is an economy built on the basis of fossil energy. However, the resource carrier of this economy will be rapidly approaching exhaustion in the 21st century. Therefore, it is imminent to develop and utilize new energy sources. [0003] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect. In 1839, the photovoltaic effect was first discovered by French physicist A.E. Becquerel. In 1883, the first solar cell was successfully prepared by Charles.Fritts. Charles used a germanium semiconductor covered with an extremely thin layer of gold to form a sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0392H01L31/04H01L31/18
CPCH01L31/0392H01L31/04H01L31/18Y02E10/50Y02P70/50
Inventor 方泽波
Owner SHAOXING UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com