Passivation layer etching method, manufacture method of pad and manufacture method of semiconductor device

Abstract

The invention provides a passivation layer etching method, a manufacture method of a pad and a manufacture method of a semiconductor device. A first etching gas of relatively high fluorocarbon content is used to etch a passivation layer structure, an etching polymer can be prevented from accumulating in an etching cavity or in the sidewall of the passivation layer effectively, and the etching effect of the passivation layer is ensured; and a second etching gas of relatively low fluorocarbon content is used to etch an etching barrier layer under the passivation layer structure, over etching time of the etching barrier layer can be shortened greatly, top-layer metal below is prevented from excessive etching, and etched top-layer metal is prevented from accumulation in the etching cavity. Thus, the problem that the etching speed is decreased is solved effectively, and performances of the pad and the semiconductor device are ensured.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for etching a passivation layer for solving the problem of reducing the etching rate of the passivation layer, and a method for manufacturing a pad and a semiconductor device. Background technique [0002] As the manufacture of integrated circuits develops towards Ultra Large-Scale Integration (ULSI: Ultra Large-Scale Integration), the circuit density on the chip is increasing, and the number of components on the chip is increasing, and the surface of the chip cannot provide enough area to Make the required interconnect structure (Interconnect). For this reason, a design method for multilayer interconnect structures with more than two layers is proposed. The design method forms grooves or through holes by etching the interlayer dielectric layer, and fills the grooves and through holes with conductive material to realize multi-layer electrical interconnection i...

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a passivation layer etching method and a manufacturing method of pads and semiconductor devices, which can solve the problem of etching rate decline and simultaneously obtain pads with better performance

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