Power module structure and manufacture method thereof

Abstract

The present invention discloses a power module structure and a manufacture method thereof. The power module structure comprises: a main switch device has the same voltage grade with a freewheeling diode, and has the same size of the current with the freewheeling diode; the collector of the main switch device is bonded with the cathode of the freewheeling diode, and the main switch device is welded on a liner plate in an inverted mode; the liner plate is provided with a plurality of discrete copper-cladding layer; the emitting electrode of the main switch device is welded with the first copper-cladding layer of the liner plate, and a grid is welded with the second copper-cladding layer on the liner plate; and the collector outgoing line of the main switch device is bonded with the third copper-cladding layer of the liner plate, and the anode outgoing line of the freewheeling diode is bonded with the fourth copper-cladding layer on the liner plate. The power module structure and manufacture method thereof realize the compaction and the miniaturization and improve the power density of the power module through welding the bonded main switch device and the freewheeling diode on the liner plate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power module structure and a manufacturing method. Background technique [0002] In recent years, as power electronic devices such as insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) devices have become more and more widely used, such as inverters on electric vehicles, drives on trains, engines, and wind power generator etc. In order to achieve compactness, miniaturization, high frequency, high power density and high integration of power electronic devices, packaging technology needs to be greatly improved. Traditionally, power semiconductor devices mostly adopt a two-dimensional planar chip layout, and main switching devices such as IGBTs and freewheeling diodes are arranged side by side on the same plane. The two-dimensional planar chip layout is not conducive to the compactness and miniaturization of the power module, which is not conducive to im...

AI Technical Summary

Problems solved by technology

The two-dimensional planar chip layout is not conducive to the compactness and miniaturization of the power module, which is not conducive to improving the power density of the power module, and usually produces large thermal stress, resulting in deflection, fracture or joint damage, which is easy to cause the chip to fail

[0004] In existing power modules, the main switching device (such as IGBT or MOSFET) and the freewheeling diode (such as FRD or SiC SBD) are arranged side by side on the same plane, which makes the power density of the power module relatively small

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