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Novel flame detector based on gallium oxide film and preparation method thereof

A flame detector, gallium oxide technology, applied in electric radiation detectors, radiation pyrometry, sensing radiation from gas/flame, etc., can solve problems such as weak signal processing ability, sunlight interference, etc., and achieve reaction Sensitive, stable performance, small dark current effect

Inactive Publication Date: 2016-07-20
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the commercialized semiconductor ultraviolet flame detectors are not based on "sun-blind" detection, are easily interfered by sunlight, and have relatively weak processing ability for weak signals.

Method used

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  • Novel flame detector based on gallium oxide film and preparation method thereof
  • Novel flame detector based on gallium oxide film and preparation method thereof
  • Novel flame detector based on gallium oxide film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Proceed as follows:

[0028] 1) Pretreatment of n-type Si substrate: put n-type Si substrate into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0029] 2) Place the target and substrate: place the Ga 2 o 3 The target is placed on the target stage of the RF magnetron sputtering system, and the n-type Si substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0030] 3) Ga 2 o 3 Thin film deposition process: first vacuumize the chamber, heat the n-type Si substrate, and then pass in argon gas to adjust the pressure in the vacuum chamber; the heating temperature of the n-type Si substrate is 700°C, and the The degree of ionization is 1.0×10 -4 Pa, the adjusted pressure of the vacuum chamber is 1Pa, Ga 2 o 3 The distance between the target and the n-type Si substrate is set to 5 cm, the sputtering pow...

Embodiment 2

[0035] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), first vacuumize the cavity, heat the n-type Si substrate, and then pass in argon gas to adjust the pressure in the vacuum cavity; wherein, the heating temperature of the n-type Si substrate is 700°C, and after the cavity is evacuated The degree of ionization is 1.0×10 -4 Pa, the adjusted pressure of the vacuum chamber is 2Pa, Ga 2 o 3 The distance between the target and the n-type Si substrate was set at 5 cm, the sputtering power was 70 W, and the deposition time was 1 hour.

[0036] Gained Ga 2 o 3 The chemical composition and morphology of the film are similar to Example 1. A voltage is applied across the interdigitated electrode of a new type of gallium oxide thin-film flame detector for photoelectric performance measurement. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the ultraviolet lamp...

Embodiment 3

[0038] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), first vacuumize the cavity, heat the n-type Si substrate, and then pass in argon gas to adjust the pressure in the vacuum cavity; wherein, the heating temperature of the n-type Si substrate is 700°C, and after the cavity is evacuated The degree of ionization is 1.0×10 -4 Pa, the adjusted pressure of the vacuum chamber is 1Pa, Ga 2 o 3 The distance between the target and the n-type Si substrate was set at 5 cm, the sputtering power was 70 W, and the deposition time was 2 hours.

[0039] Gained Ga 2 o 3 The chemical composition and morphology of the film are similar to Example 1. A voltage is applied across the interdigitated electrode of a new type of gallium oxide thin-film flame detector for photoelectric performance measurement. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the ultraviolet lam...

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Abstract

The invention relates to a novel flame detector and a preparation method thereof, and in particular relates to a novel flame detector based on a gallium oxide film and a preparation method thereof. According to the preparation method, a layer of Ga2O3 film is deposited on a Si substrate via a radio frequency magnetron sputtering technology, and then a layer of golden film interdigital electrode is deposited on the Ga2O3 film by using a mask plate. The photoelectric property test result of the flame detector shows that the device has good photoelectric response to deep ultraviolet rays. The preparation method of the novel flame detector has the advantages that the prepared flame detector based on the Ga2O3 film is stable in performance, strong in photoelectric response to the deep ultraviolet rays of the sun blind region, sensitive in reaction and small in dark current, and can be applied to detecting fire alarm and corona of high-tension cable; in addition, the preparation method has the characteristics of being strong in technology controllability, simple to operate, good in universality, restorable for repeated testing, and has a great application prospect.

Description

technical field [0001] The invention relates to a novel flame detector and a preparation method thereof, in particular to a novel flame detector based on a gallium oxide thin film and a preparation method thereof. technical background [0002] At present, the flame detection on the market is mainly based on infrared detection, but due to the large amount of infrared rays in nature, such as human body infrared radiation, etc., it is easy to interfere with the detector, resulting in false alarms, resulting in unnecessary manpower and material losses. ; But the "solar-blind" ultraviolet detector is less disturbed by the environment because the received signal is the light in the ultraviolet band, and the ultraviolet light in nature is absorbed by the atmosphere. [0003] β-Ga 2 o 3 It is a semiconductor material with deep ultraviolet characteristics, 200nm β-Ga 2 o 3 The film can achieve a transmittance of more than 80% in the ultraviolet region, making up for the shortcomi...

Claims

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Application Information

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IPC IPC(8): H01L31/18G01J5/00G01J5/20H01L31/0224
CPCH01L31/022408G01J5/0018G01J5/20Y02P70/50
Inventor 张球新王坤王顺利李小云李培刚
Owner ZHEJIANG SCI-TECH UNIV
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