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Er<3+>/Pr<3+> co-doped Na5Lu9F32 monocrystal and growth method thereof

A growth method and single crystal technology, applied in the field of Na5Lu9F32 single crystals, can solve problems such as unfavorable large-scale production of fluoride single crystals, affecting crystal quality, etc., and achieve the effects of simple equipment and improved luminous efficiency

Inactive Publication Date: 2016-07-20
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the crucible and the growth raw material are in a state of mechanical transmission, mechanical transmission will cause adverse factors such as a large number of color bands and growth stripes in the crystal, which seriously affect the quality of the crystal, which are not conducive to the scale of high-quality fluoride single crystals. Production

Method used

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  • Er&lt;3+&gt;/Pr&lt;3+&gt; co-doped Na5Lu9F32 monocrystal and growth method thereof
  • Er&lt;3+&gt;/Pr&lt;3+&gt; co-doped Na5Lu9F32 monocrystal and growth method thereof
  • Er&lt;3+&gt;/Pr&lt;3+&gt; co-doped Na5Lu9F32 monocrystal and growth method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A rare earth ion doped Na 5 Lu 9 f 32 A method for growing a single crystal, comprising the following specific steps:

[0036] (1), according to the following composition: 40mol% NaF, 59.31mol% LuF 3 , 0.66mol% ErF 3, 0.03mol% PrF 3 , weighing a total amount of 150 grams of each preparation raw material with a purity greater than 99.99%, placing them in a mill after mixing, and milling and mixing for 5 hours to obtain a uniform powder;

[0037] (2), the above-mentioned mixture is placed in the boat-shaped platinum crucible, and then installed in the platinum pipeline of the tubular resistance furnace, and then firstly use N 2 Remove the air in the platinum pipe with gas, and then conduct reaction treatment for 5 hours at a temperature of 770°C under HF gas. 2 Gas cleaning the residual HF gas in the pipeline to obtain polycrystalline powder;

[0038] (3), the above-mentioned polycrystalline powder is placed in a grinder and ground into powder, then placed in a Pt ...

Embodiment 2

[0047] It is basically the same as Example 1, except that the raw materials in step (1) are composed according to the following proportions: 40mol% NaF, 56.42mol% LuF 3 , 3.3mol% ErF 3 , 0.28mol% PrF 3 , placed in a mill after mixing, milling and mixing for 6 hours; in the step (2), at a temperature of 800 ° C, under HF gas, the reaction treatment was carried out for 1 hour; the parameters for growing crystals in the step (4) were: furnace body temperature is 1020°C, the inoculation temperature is 880°C, the temperature gradient of the solid-liquid interface is 80°C / cm, and the upward movement speed of the thermal field is 2mm / h; in step (5), the furnace temperature is lowered to room temperature at 50°C per hour, and finally Er 3+ / Pr 3+ double doped Na 5 Lu 9 f 32 single crystal.

Embodiment 3

[0052] It is basically the same as Example 1, except that the raw materials in step (1) are composed according to the following proportions: 40mol% NaF, 57.77mol% LuF 3 , 2.1mol% ErF 3 , 0.13mol% PrF 3, placed in a mill after mixing, milling and mixing for 5.5 hours; in step (2), at a temperature of 780 ° C, under HF gas, the reaction treatment was carried out for 3 hours; the parameters for growing crystals in step (4) were: furnace body temperature The inoculation temperature is 1010°C, the inoculation temperature is 870°C, the temperature gradient of the solid-liquid interface is 60°C / cm, and the upward movement speed of the thermal field is 1.2mm / h; in step (5), the furnace temperature is lowered to room temperature at 30°C per hour, and finally get Er 3+ / Nd 3+ double doped Na 5 Lu 9 f 32 single crystal.

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Abstract

The invention discloses an Er<3+> / Pr<3+> co-doped Na5Lu9F32 monocrystal and a growth method thereof. Ions Er<3+> and Pr<3+> are doped in a Na5Lu9F32 monocrystal and Pr<3+> is used as a sensitizing ion. The content of OH- ions in the monocrystal is low, no absorption occurs at a wave band 2.7mu m, and the maximum phonon energy is low (440cm<-1>). Under the excitation of a 98nm laser diode, a greatly enhanced 2.7mu m luminous effect is obtained. By adopting a heating temperature field up-shifting method to perform crystal growth, the growth method has the characteristics of simple equipment, strong practicability and the like. The technique can overcome the defects of colored tapes, growth stripes and the like caused by mechanical transmission to the crystal, and facilitate obtaining a high-quality monocrystal.

Description

technical field [0001] The present invention relates to Na 5 Lu 9 f 32 Single crystal, in particular to an Er with enhanced emission properties in the 2.7 μm mid-infrared band 3+ / Pr 3+ Co-doped Na 5 Lu 9 f 32 Single crystals and methods of growing them. Background technique [0002] In recent years, due to its important applications in laser medical surgery, remote sensing, lidar, chemical sensing and military, solid-state lasers in the mid-infrared 2.7μm central band have been highly valued by research institutions at home and abroad. [0003] Inorganic materials doped with rare earth ions are one of the effective ways to obtain near-infrared and mid-infrared lasers. Most lanthanide rare earth ions have abundant energy level structures. Among them Er 3+ rare earth ion 4 I 11 / 2 → 4 I 13 / 2 The energy level jump can produce 2.7μm fluorescence emission, with Er 3+ The 2.7μm mid-infrared laser materials with luminescent centers have been studied to some extent, m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/02
CPCC30B11/02C30B29/12
Inventor 何仕楠夏海平汤庆阳盛启国
Owner NINGBO UNIV
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