Novel bottom gate structured flexible thin film transistor and preparation method therefor

Abstract

The invention discloses a novel bottom gate structured flexible thin film transistor and a preparation method therefor, and belongs to the technical field of a semiconductor thin film transistor. The thin film transistor comprises a flexible substrate, a gate electrode, an insulating layer, an active layer, a source electrode and a drain electrode from the bottom up in sequence, wherein the gate electrode, the source electrode and the drain electrode adopt silver nanowire thin films; and the insulating layer adopts a PMMA thin film. The thin film transistor provided by the invention adopts the PMMA as the insulating layer, and takes the Ag nanowire thin films as the conductive electrode layer; the characteristics of bending resistance and high insulation of the PMMA thin film, and the characteristics of bending resistance and high conductivity of the Ag nanowire thin films are utilized, so that the shortcoming that the thin film transistor is damaged easily under a bending condition is overcome; and therefore, the novel bottom gate structured flexible thin film transistor can be applied to the fields of large-area flexible display, electronic paper, sensors and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film transistors, and in particular relates to a novel flexible thin film transistor with a bottom gate structure and a preparation method thereof. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) can be divided into two categories: bottom gate structure and top gate structure according to the position of the gate. The top gate structure is characterized by the gate at the top, although the source and drain electrodes of this structure can be used The photolithography process prepares high-precision channels, but it is not conducive to the formation of the extended structure of the gate, and the bending of the gate structure may cause dislocation of the contact area between the electrode and the extended part; the bottom gate structure is characterized by the fact that the gate is directly deposited on the On the substrate, a good contact betwee...

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Problems solved by technology

[0003] Metal electrodes such as gold used in traditional thin-film transistors are usually prepared by evaporation or electron beam evaporation, which is complex and costly; metal oxide insulating layers such as aluminum oxide are usually prepared by sputtering / atomic layer deposition and other methods. Preparation, complex process, high cost, and metal oxide insulating layer materials are fragile, which limits its wide application

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