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Preparation method of silver-doped modified ruthenium dioxide thick-film resistance slurry

A ruthenium dioxide, thick film resistor technology, applied in resistors, conductive materials dispersed in non-conductive inorganic materials, non-adjustable metal resistors, etc., to meet production needs, facilitate promotion and industrialized production.

Inactive Publication Date: 2016-07-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of preparation method of silver-doped modified ruthenium dioxide thick-film resistance paste, solve the problem that there is contradiction between low resistance and high TCR of existing thick-film resistance paste, this method has great influence on production process There are no special requirements for equipment and equipment, which is convenient for promotion and industrial production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Weigh RuO according to the mass ratio 4:2:0.5 2 Powder, CuO powder and Ag powder; RuO to be weighed 2 Powder, CuO powder and Ag powder are mixed together to form a mixture material; add the mixture material to the ball mill device, and add deionized water and grinding balls to the ball mill device, turn on the ball mill device, and perform ball milling treatment on the mixture material to obtain a ball mill Materials, in the ball milling process: 3ml of deionized water should be added to each gram of the mixture; the ratio of the mixture to the grinding ball is 1.5:1, the grinding ball is agate ball, and the ball milling time is controlled to 4h; The speed is controlled to 400 revolutions / rpm; take out the ball mill material from the ball mill device, and dry the ball mill material at 50°C to obtain the dry ball mill material; pulverize the dried ball mill material by grinding, and then put it into the crucible. The crucible is heated to 800°C and kept for 8 hours, after ...

Embodiment 2

[0097] Weigh RuO according to the mass ratio of 8: 4: 2 2 Powder, CuO powder and Ag powder; RuO to be weighed 2 Powder, CuO powder and Ag powder are mixed together to form a mixture material; add the mixture material to the ball mill device, and add deionized water and grinding balls to the ball mill device, turn on the ball mill device, and perform ball milling treatment on the mixture material to obtain a ball mill Material, in the ball milling process: 7ml of deionized water should be added to each gram of the mixture; the ratio of the mixture to the grinding ball is 3:1, the grinding ball is agate ball, and the milling time is controlled to 6h; The rotation speed is controlled to 500 revolutions / rpm; take out the ball mill material from the ball mill device, dry the ball mill material at 70°C to obtain the dry ball mill material; crush the dried ball mill material by grinding, and then put it into the crucible. The crucible is heated to 1000°C and kept for 5 hours. After the...

Embodiment 3

[0102] Weigh RuO according to the mass ratio of 6:3:1 2 Powder, CuO powder and Ag powder; RuO to be weighed 2 Powder, CuO powder and Ag powder are mixed together to form a mixture material; add the mixture material to the ball mill device, and add deionized water and grinding balls to the ball mill device, turn on the ball mill device, and perform ball milling treatment on the mixture material to obtain a ball mill Materials, in the ball milling process: 5ml of deionized water should be added to each gram of the mixture; the ratio of the mixture to the grinding ball is 2:1, the grinding ball is made of agate balls, and the ball milling time is controlled to 5h; The rotation speed is controlled to 450 revolutions / rpm; take out the ball mill material from the ball mill device, dry the ball mill material at 60°C to obtain the dried ball mill material; crush the dried ball mill material by grinding, and then put it into the crucible, The crucible is heated to 900°C and kept for 6 ho...

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Abstract

The invention discloses a preparation method of silver-doped modified ruthenium dioxide thick-film resistance slurry. The method specifically comprises the following steps of: 1, using RuO2 powder, CuO powder and Ag powder to prepare a conductive phase; 2, using SiO2, Al2O3, CaO, BaO, B2O3, PbO and Bi2O3 to prepare a modified aluminosilicate glass phase; 3, using terpilenol, cellulose, butyl carbitol and castor oil to prepare an organic phase; and 4, uniformly mixing the conductive phase obtained in the step 1, the modified aluminosilicate glass phase obtained in the step 2 and the organic phase in the the step 3 to obtain the silver-doped modified ruthenium dioxide thick-film resistance slurry. According to the invention, the problem that a contradiction exists between low resistance and high TCR of the present thick-film resistance slurry is solved, the preparation method has no specific demands on the production process and device, and the popularization and the industrial production are facilitated.

Description

Technical field [0001] The invention belongs to the technical field of thick film slurry preparation methods, and specifically relates to a preparation method of a silver-doped modified ruthenium dioxide thick film resistor slurry. Background technique [0002] Thick film resistor paste is an electronic functional material that integrates materials, chemical industry, metallurgy and electronic technology. It is the basic material for hybrid integrated circuits, surface assembly technology, resistor networks, sensitive components and various discrete electronic components. Thick film resistors prepared by them have the characteristics of simple manufacture, excellent performance and strong stability, and are widely used in many fields such as aerospace, measurement and control systems, communication systems, medical equipment, hybrid integrated circuits, and civil electronic products. [0003] Thermistor is a kind of resistance whose resistance changes with temperature and produces ...

Claims

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Application Information

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IPC IPC(8): H01B1/20H01B1/22H01C7/00
CPCH01B1/20H01B1/22H01C7/00
Inventor 孙鹏李智敏张茂林闫养希黄云霞郝跃
Owner XIDIAN UNIV
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