Block copolymer and method and application for forming microphase separation perpendicular phase domain structure

A technology of block copolymer and microphase separation, which is applied in the photolithographic process, instrument, optics and other directions of the pattern surface, and can solve the problems that cannot meet the technical requirements, the difference in surface free energy is too large, and the thermal annealing process cannot be satisfied.

Active Publication Date: 2016-06-29
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although ITRS predicts that PS-b-PMMA is the block polymer most likely to achieve industrialization, PS-b-PMMA is a weakly phase-separated polymer (χ≈0.037, 150°C), so PS-b-PMMA can only Fabrication of structures ≥12nm cannot meet the technical requirements of the next generation half-pitch <11nm
[0005] So far, although scientists have synthesized hundreds of block copolymers with high χ value, such as polystyrene-poly2-vinylpyridine (PS-b-P2VP, Adv. Mater. 2015, 27, 4364), Polystyrene-poly-4-vinylpyridine (PS-b-P4VP, χ≈0.4, 150°C, Macromolecules, 2007, 40, 2109), polystyrene-polyethylene glycol (PS-b-PEO, χ≈ 0.047, 150℃, Macromo

Method used

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  • Block copolymer and method and application for forming microphase separation perpendicular phase domain structure
  • Block copolymer and method and application for forming microphase separation perpendicular phase domain structure
  • Block copolymer and method and application for forming microphase separation perpendicular phase domain structure

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Embodiment 1

[0039] The preparation method of AB type polystyrene-polypropylene carbonate (PS-b-PPC) block copolymer is as follows:

[0040] Styrene (PS-OH, number average molecular weight 10700, 0.05mmol) with hydroxyl groups at the end was added to the copolymerization reaction system of carbon dioxide (2.0Mpa) and propylene oxide (2g, 34mmol), in the metal coordination catalyst SalenCoCl, Under the catalysis of 0.025mmol, the copolymerization reaction of carbon dioxide and propylene oxide undergoes chain transfer, and a chain growth reaction occurs on the hydroxyl group at the end of polystyrene. After 72 hours of reaction, the reaction is stopped, and the polymerization reaction solution is precipitated with methanol and the catalyst is washed away. And homopolymer, obtain AB type polystyrene-polypropylene carbonate block copolymer (PPC number average molecular weight is 12800).

[0041] 5 milligrams of AB type polystyrene-polypropylene carbonate (PS-b-PPC) block copolymers are dissolv...

Embodiment 2

[0044] Under the same preparation method, equipment, polymer and operating conditions as in Example 1, only the condition of thermal annealing at 130° C. for 12 hours under vacuum was changed to thermal annealing at 180° C. for 1 minute under nitrogen atmosphere. attached by Figure 4 It can be seen from the scanning electron microscope pictures shown that the phase domain arrangement perpendicular to the surface of the silicon wafer is obtained, and the half-pitch reaches 8.5nm.

Embodiment 3

[0046] The preparation method of AB type polystyrene-polypropylene carbonate (PS-b-PPC) block copolymer is as embodiment 1.

[0047] 5 milligrams of AB type polystyrene-polypropylene carbonate (PS-b-PPC) block copolymers are dissolved in 0.5 g of chlorobenzene, wherein PS number-average molecular weight is 10700, PPC number-average molecular weight is 12800, carbonate The unit content was 99%, and the molecular weight distribution was 1.01. Spin-coat the complete PS-b-PPC chlorobenzene solution to the silicon wafer with a cycle of 84nm linear patterns at a speed of 4000 rpm, (84nm linear patterns can be obtained by photolithography or electron beam etching, etc. Preparation by means commonly used in the world, such as the photolithography technology and nano-pattern preparation method used in the reported literature Nature2003, 424, (6947), 411-41 and Science, 2008, 321, 936), to obtain a block with a film thickness of about 25nm polymer film.

[0048] Thermal annealing at 1...

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Abstract

The invention relates to a block copolymer. The block copolymer is a type-AB diblock copolymer or a type-ABA or type-BAB triblock copolymer. The block copolymer A is polycarbonate formed by alternating copolymerization of carbon dioxide and alkyleneoxide. The number-average molecular weight of the polycarbonate ranges from 500 to 300000, the unit content of the polycarbonate is 30-100%, the content of polyether generated by homopolymerization of the alkyleneoxide is 0-70%, and the molecular weight ranges from 1.00 to 2.00; the number-average molecular weight of the block copolymer B ranges from 500 to 300000, and the molecular weight is distributed between 1.00 to 2.00. The invention further relates to a method for forming a microphase separation perpendicular phase domain structure and application of the block copolymer under the directed self-assembly technology. The block copolymer forms a perpendicular phase domain structure penetrating through the whole film thickness on the thermal annealing condition, regularly-arranged nano-patterns are formed through directed assembling, and the technical requirement that the half section of the next generation in the semiconductor industry is smaller than 11 nanometers is met.

Description

technical field [0001] The invention relates to the field of block copolymers, in particular to a block copolymer and a method and application for forming a microphase-separated vertical domain structure. Background technique [0002] Since the first computer was born at the University of Pennsylvania in 1946, the computer has changed from a mysterious and inaccessible behemoth to an indispensable tool in people's work and life today, mainly due to the fast processing speed of computer semiconductor chips. Increase. The processing speed of a computer chip depends on the number of integrated transistors per unit area. As the number of transistors per unit area increases, the computing speed of the computer becomes faster and faster. During this period, the development speed of computers has always followed Moore's Law, which is regarded as the standard in the semiconductor industry: the number of transistors and resistors integrated on a semiconductor chip doubles every 18-2...

Claims

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Application Information

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IPC IPC(8): C08G64/18C08G64/40C08G64/34G03F7/00
CPCC08G64/18C08G64/34C08G64/40G03F7/00
Inventor 伍广朋
Owner ZHEJIANG UNIV
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