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Ultraviolet light-emitting diode chip and preparing method thereof

A light-emitting diode and chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light output efficiency of ultraviolet LED chips, achieve the effects of improving external quantum efficiency, reducing junction temperature, and enhancing thermal reliability

Active Publication Date: 2016-06-08
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide an ultraviolet light-emitting diode chip and its preparation method, aiming to solve the problem of low light extraction efficiency of ultraviolet LED chips

Method used

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  • Ultraviolet light-emitting diode chip and preparing method thereof
  • Ultraviolet light-emitting diode chip and preparing method thereof
  • Ultraviolet light-emitting diode chip and preparing method thereof

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Embodiment Construction

[0044] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0045] The application principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0046] Such as figure 1 As shown, the preparation method of the ultraviolet light-emitting diode chip of the embodiment of the present invention includes the following steps:

[0047] S101: Prepare a sapphire substrate, and sequentially grow an aluminum nitride buffer layer, an n-type aluminum gallium nitride layer, a multi-quantum well active layer, and a p-type aluminum gallium nitride layer on the surface of the sapphire substrate; The aluminum oxide buffer layer, the n-type alumi...

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Abstract

The invention discloses an ultraviolet light-emitting diode chip provided with a metal wire grid transparent conduction electrode and a preparing method thereof. The ultraviolet light-emitting diode chip comprises a substrate, an aluminum nitride buffering layer, an n-type aluminum gallium nitride layer, a multiple-quantum-well active layer (MQW) and a p-type aluminum gallium nitride layer, wherein the aluminum nitride buffering layer, the n-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the p-type aluminum gallium nitride layer grow from the surface of the substrate sequentially in an overlaid mode. The aluminum nitride buffering layer, the n-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the p-type aluminum gallium nitride layer form an epitaxial layer of the chip. A metal wire grid is deposited on the epitaxial layer. An aluminum reflecting layer is deposited on the metal wire grid. The chip is provided with an n-type electrode hole penetrating through the aluminum reflecting layer, the metal wire grid, the p-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the n-type aluminum gallium nitride layer. The line width, the duty ratio and the thickness of the metal wire grid can be adjusted and controlled, the ultraviolet light transmittance rate is larger than 90%, and square resistance is smaller than 25 ohm. Light outlet efficiency of installing the ultraviolet LED chip in an inverted or upright mode is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, and in particular relates to an ultraviolet light-emitting diode chip with metal wire grid transparent conductive electrodes and a preparation method thereof. Background technique [0002] Ultraviolet LEDs have great application value in the fields of lighting, sterilization, medical treatment, printing, biochemical detection, high-density information storage and secure communication. For ultraviolet LED devices, in the past ten years, researchers in academia and industry at home and abroad have devoted a lot of energy to research methods to improve the quantum efficiency of ultraviolet LED chips, using metal organic chemical vapor deposition (MOCVD) method on sapphire substrate The epitaxial layer of ultraviolet LED is grown on the bottom, the crystal quality of the epitaxial material is improved by adjusting the epitaxial growth process, the dislocation density of the epitaxial m...

Claims

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Application Information

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IPC IPC(8): H01L33/36H01L33/42H01L33/06H01L33/32H01L33/46H01L33/00
CPCH01L33/0075H01L33/06H01L33/32H01L33/36H01L33/42H01L33/46
Inventor 周圣军刘胜郑晨居吕家将
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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