Full-graphene group flexible organic field-effect transistor and manufacturing method thereof

Abstract

The invention provides a full-graphene group organic field-effect transistor and a manufacturing method thereof. The electrical properties of the field-effect transistor is improved by using the stability and high migration rate of graphene group materials, and meanwhile, high-quality thin films can be obtained from graphene group semiconductor materials by using a spin coating technology, so that the requirement for equipment in production is reduced; and moreover, electrodes can be formed on dielectric layers directly by using an oxidized graphene femtosecond laser reduction technology, automatic production can be realized through software control, and the full-graphene group organic field-effect transistor is convenient for large-scale preparation and low in production cost. The full-graphene group organic field-effect transistor provided by the invention is of two structures, which are a bottom-gate top contact organic field-effect transistor and a bottom-gate bottom contact organic field-effect transistor, and the difference is that the positions of source electrodes and drain electrodes of the bottom-gate top contact organic field-effect transistor and the bottom-gate bottom contact organic field-effect transistor are different. The full-graphene group organic field-effect transistor can be applied to manufacturing of flexible circuits such as flexible display screens, intelligent wearable equipment and biological sensors, and provides the solution to further application of future organic integrated circuits.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an all-graphene family flexible organic field effect transistor and a manufacturing method thereof Background technique [0002] As the most basic electronic component in integrated circuits, field effect transistors are necessary components for the manufacture of various integrated circuits, and are widely used in various electronic products, such as computer chips, mobile phones, digital cameras, etc. Its performance also affects the overall performance of the circuit. Taking computer chips as an example, with the development of integrated circuits, the integration level is getting higher and higher. The current mainstream integration level is 64M, that is, the number of electronic components contained on a single chip. The number is 60 million, and the line width of the most advanced integrated circuit in the world has been reduced to 0.13 microns, that is, the minimum cha...

AI Technical Summary

Problems solved by technology

At present, the organic semiconductor material with the highest mobility is pentacene. The performance parameters of field effect transistors prepared with this material have reached the level of amorphous silicon. However, the field effect transistors prepared from this material need to be grown by physical vapor deposition under high vacuum. Single crystal thin film is formed, but the growth of single crystal thin film is difficult to control. At the same time, the stability of the device is poor, and it is difficult to meet the production requirements for product yield. Moreover, the physical vapor deposition method requires high vacuum and high temperature, which is harmful to production equipment and High process control requirements and high energy consumption are not conducive to low-cost commercial production; in addition, the current method of preparing flexible electrodes in field effect transistors is to sputter indium tin oxide (ITO) on flexible substrates, but ITO itself is relatively Brittle, it will crack under mechanical stress and excessive bending, so ITO electrodes also restrict the application of device flexibility

Images