Preparation method of zinc oxide target and preparation method of zinc oxide film

A zinc oxide and target technology, applied in the field of zinc oxide target preparation, can solve the problems of the influence of film growth rate, low sputtering efficiency, long working time, etc.

Active Publication Date: 2016-05-11
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a problem of low sputtering efficiency when preparing oxide films by AC magnetron sputtering. In order to obtain a film with a certain thickness, it takes a long time to work.
Low sputtering efficiency and film growth rate affect the rhythm of production, especially in large-scale continuous production.

Method used

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  • Preparation method of zinc oxide target and preparation method of zinc oxide film
  • Preparation method of zinc oxide target and preparation method of zinc oxide film
  • Preparation method of zinc oxide target and preparation method of zinc oxide film

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preparation example Construction

[0025] see figure 1 , a method for preparing a zinc oxide target according to an embodiment, comprising the following steps:

[0026] S10, providing target material raw materials, and performing the first ball milling treatment on the target material raw materials to obtain powder.

[0027] Preferably, the raw material of the target includes zinc oxide and doping materials. The doping material is at least one selected from compounds containing magnesium, compounds containing beryllium, compounds containing calcium, compounds containing strontium and compounds containing barium. The mass ratio of oxide to zinc oxide corresponding to the dopant material in the target raw material is 0:100-5:100. When the doping material content is 0, the prepared zinc oxide target is a pure zinc oxide target. The oxides corresponding to the magnesium-containing compound, the beryllium-containing compound, the calcium-containing compound, the strontium-containing compound, and the barium-conta...

Embodiment 1

[0063] The preparation method of the pure ZnO target in this embodiment includes the following steps:

[0064] Step 1: 1000g of ZnO powder with a purity of 99.95% and a center particle size of 0.9μm is mixed with deionized water and 30g of ammonium polyacrylate, and the amount of deionized water is controlled according to the slurry with a solid content of 50%, using a drum type Ball milling, zirconium balls are grinding balls, after ball milling for 12 hours, filter the zirconium balls to obtain ceramic slurry, and dry at 90° C. for 24 hours to obtain powder.

[0065] Step 2: Calcining the dry powder in step 1, the calcination temperature is 550° C., the atmosphere is air, and the calcination time is 2 hours.

[0066] Step 3. The calcined powder described in step 2 is ball milled for the second time, mixed with deionized water, 15g of polyvinyl alcohol and 20g of ammonium polyacrylate, and the deionized water is controlled according to the slurry with a solid content of 35%. ...

Embodiment 2

[0073] The ZnO:Mg target preparation method of this embodiment includes the following steps:

[0074] Step 1, 1000g of ZnO powder with a purity of 99.95%, a central particle size of 4μm, and an addition of 1g of MgO, mixed with deionized water and 10g of ammonium polyacrylate, and controlling the deionized water according to the slurry with a solid content of 70%. The amount of the ceramic slurry was obtained by drum milling with zirconium balls as grinding balls after 12 hours of ball milling, and dried at 90°C for 24 hours to obtain powder.

[0075] Step 2, calcining the powder, the calcining temperature is 1000° C., the atmosphere is air, and the calcining time is 1 h.

[0076] Step 3. The calcined powder described in step 2 is ball milled for the second time, mixed with deionized water, 5g of polyvinyl alcohol and 5g of ammonium polyacrylate, and the deionized water is controlled according to the slurry with a solid content of 35%. The amount of the mixture was drum-mille...

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Abstract

The invention discloses a preparation method of a zinc oxide target and a preparation method of a zinc oxide film. The preparation method of the zinc oxide target comprises the following steps: providing a target raw material, and ball milling the target raw material for the first time to obtain powder; calcining the powder; ball milling the calcined powder for the second time and then granulating to obtain particles; forming the particles into a biscuit; degreasing the biscuit in air atmosphere to obtain a degreased biscuit; and anaerobically sintering the degreased biscuit to obtain the zinc oxide target. The zinc oxide target prepared by the preparation method of the zinc oxide target has good electrical conductivity. The conductive target may be made into a zinc oxide film high in resistivity and transparency by means of direct-current magnetron sputtering and oxygen atmospheric coating. The target prepared in the invention can meet the requirements for direct-current magnetron sputtering and high-resistance zinc oxide film preparation.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide target material and a preparation method of a zinc oxide thin film. Background technique [0002] ZnO thin film is a widely used material, and its properties show great differences with different doping components and preparation conditions. The application of ZnO thin film mainly focuses on transparent conductivity, piezoelectricity, photoelectricity, gas sensitivity, pressure sensitivity and so on. It is difficult for ZnO materials to achieve a perfect stoichiometric ratio. Zinc interstitials and oxygen vacancies naturally exist. In addition to the two dominant defects with donor properties, ZnO also has oxygen interstitials, oxygen dislocations and zinc vacancies. defects such as vacancies. Therefore, the intrinsic state of the ZnO material is an n-type polar semiconductor, and both bulk and thin films have very weak conductivity. In order to obtain ZnO materials with good conductivity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/64
CPCC04B35/453C04B35/64C04B2235/3205C04B2235/3206C04B2235/3208C04B2235/3213C04B2235/3215C04B2235/658C04B2235/6582
Inventor 许积文唐浩宋永生李文杰莫方策韦崇敏
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
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