Three-dimensional dirac semi-metal material-based infrared saturable absorption device

Abstract

The invention discloses a three-dimensional dirac semi-metal material-based infrared saturable absorption device. A three-dimensional dirac semi-metal material with a zero band gap and a linear energy dispersion relation is utilized as a saturable absorption layer; an operating wavelength covers an infrared region; and a plurality of parameters have high adjustability. The three-dimensional dirac semi-metal material-based infrared saturable absorption device comprises the saturable absorption layer and an optical element, wherein the saturable absorption layer is formed by a three-dimensional dirac semi-metal material; and the optical element is required for bearing the saturable absorption layer; a reflective saturable absorption device comprises a functional layer (1), an optical substrate (2), the saturable absorption layer (3) and a reflecting layer (4) from top to bottom; a transmission type saturable absorption device comprises the functional layer (1), the optical substrate (2) an the saturable absorption layer (3); and the operating wavelength covers the infrared region. An infrared Q-switched and mode-locked laser device of the three-dimensional dirac semi-metal material-based saturable absorption device has the advantages of high stability, tunable operating wavelength, high output power and the like.

Description

technical field [0001] The invention relates to an infrared saturable absorption device based on a three-dimensional Dirac semimetal material, and belongs to the technical field of lasers. Background technique [0002] Infrared pulsed laser has extremely high application value in the fields of spectroscopy, free space communication, medicine and precision surgery. There are mainly two ways to generate infrared pulsed laser, active and passive. Among them, the passive way is favored by people because it does not require external electronic control devices and generates shorter pulses. [0003] Saturable absorbing device is the core device to achieve passive pulsed laser generation. The optical absorptivity of the device decreases with the increase of the incident light power, and has a remarkable optical saturable absorption feature. The relatively mature saturable absorber devices in the technology are semiconductor saturable absorber mirrors (SESAMs). SESAMs are generall...

AI Technical Summary

Problems solved by technology

However, the commonly used material systems of SESAMs GaAs, InP, etc., their working wavelength can only cover the near-infrared band (<1.5μm)

Although some improvement schemes have appeared in recent years, its working wavelength has not yet been extended to the long-wavelength infrared band, especially the band of 3 μm and above

[0004] In recent years, low-dimensional nanomaterials such as carbon nanotubes, graphene, quasi-two-dimensional topological insulators, two-dimensional transition metal sulfides, and black phosphorus have shown excellent broadband optical saturable absorption properties, but these low-dimensional Most materials are prepared by liquid-phase exfoliation or post-transfer methods, which inevitably introduce a large number of defects into the device, making it difficult to control the crystallization quality of the material, greatly reducing the repeatability of the device, and there is no reliable nonlinear optical The control scheme of the parameters is proposed

This current situation limits the generation and optimization of infrared pulsed lasers, which is far from meeting people's needs for infrared pulsed lasers

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