Chip frame with high bonding wire quality and manufacturing method thereof

A manufacturing method and framework technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of unfavorable chip lead pin welding, slow welding speed, poor welding quality, etc., and achieve improved welding performance and welding High quality, fast welding speed and high quality welding wire

Active Publication Date: 2018-02-06
CHENGDU ADVANCED POWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome that the outer surface coating both sides of existing chip frame is to be coated with nickel-palladium-gold or palladium-silver-gold-nickel alloy, and coating nickel-palladium-gold coating is unfavorable for the soldering of the chip lead foot on the frame, poor welding quality, welding The speed is also slow and the work efficiency is low, and when the palladium-silver-gold-nickel alloy coating is used, the exposed part of the frame will change color during welding. A chip frame with high bonding wire quality and its manufacturing method are provided. The chip frame passes through Adjust the structure of the surface coating so that the wire bonding speed of the chip frame is fast, the quality is good, and the frame and lead pins are not easy to change color

Method used

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  • Chip frame with high bonding wire quality and manufacturing method thereof
  • Chip frame with high bonding wire quality and manufacturing method thereof
  • Chip frame with high bonding wire quality and manufacturing method thereof

Examples

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Embodiment 1

[0033] In this embodiment, the chip frame is used for the chip frame of the SOD882 type, such as Figure 1-Figure 4 As shown, the chip frame with high wire bonding quality in this embodiment includes a frame body 1, the frame body is divided into a frame front for packaging chips and a frame back corresponding to the frame front, and the frame front is coated with palladium A silver-gold-nickel protective layer 2, the back of the frame is coated with a nickel-palladium-gold protective layer 3.

[0034] In this embodiment, the palladium-silver-gold-nickel protective layer 2 coated on the front side of the frame is a multilayer structure from the inside to the outside, and from the inside to the outside are the front Ni layer 201, the front Pd layer 202, and the front Ag layer 203. and the front Au layer 204, wherein Ni is nickel, Pd is palladium, Ag is silver, and Au is gold. A small amount of nickel can improve the thermal stability of the alloy in hydrogen, while palladium a...

Embodiment 2

[0050] In this embodiment, the chip frame is used for the chip frame of DFN3030 type, such as Figure 1-Figure 4 As shown, the chip frame with high wire bonding quality in this embodiment includes a frame body 1, the frame body is divided into a frame front for packaging chips and a frame back corresponding to the frame front, and the frame front is coated with palladium A silver-gold-nickel protective layer 2, the back of the frame is coated with a nickel-palladium-gold protective layer 3.

[0051] In this embodiment, the palladium-silver-gold-nickel protective layer 2 coated on the front side of the frame is a multilayer structure from the inside to the outside, and from the inside to the outside are the front Ni layer 201, the front Pd layer 202, and the front Ag layer 203. and the front Au layer 204, wherein Ni is nickel, Pd is palladium, Ag is silver, and Au is gold. A small amount of nickel can improve the thermal stability of the alloy in hydrogen, while palladium and ...

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PUM

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Abstract

The invention discloses a chip frame. The chip frame with high bonding wire quality of the present invention includes a frame body, the frame body is divided into a frame front for packaging chips and a frame back corresponding to the frame front, the front of the frame is coated with a palladium-silver-gold-nickel protective layer, The back of the frame is coated with a nickel-palladium-gold protective layer. The front and back of the chip frame are coated with different protective layers, the front of the frame is coated with a palladium-silver-gold-nickel protective layer, and the back of the frame is coated with a nickel-palladium-gold protective layer. The chip leads are welded with fast speed and good quality, and use the nickel-palladium-gold protective layer coated on the back of the frame to protect the frame and lead pins from discoloration, so that the welding wire quality of the entire frame is high, the welding speed is fast, and the frame and lead pins are not discolored. It will change color, solve the long-standing technical defects in this field, and have better technical effects.

Description

technical field [0001] The invention relates to a chip frame, in particular to a chip frame with high bonding wire quality and a manufacturing method thereof. Background technique [0002] Semiconductor packaging technology is actually a technology for packaging chips, because the chip must be isolated from the outside world to prevent impurities in the air from corroding the chip circuit and causing electrical performance to decline. The chip frame is used as a carrier for packaging chips. The bonded gold wire realizes the electrical connection between the lead-out end of the chip's internal circuit and the outer lead, forming a key structural part of the electrical circuit. It acts as a bridge connecting the external wire. Most of the semiconductor integrated blocks need to use the chip frame. Important basic materials in the electronic information industry. In order to protect the chip from being polluted and oxidized, it is necessary to coat the surface of the frame wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/495
Inventor 许兵樊增勇李宁崔金忠
Owner CHENGDU ADVANCED POWER SEMICON
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