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Preparing method for aluminum base silicon carbide

A technology of aluminum-based silicon carbide and aluminum powder, applied in metal processing equipment, transportation and packaging, etc., can solve the problems of many constraints, uneven material, low mechanical properties, etc., to improve sintering performance, uniform composition distribution, reduce Effect of sintering temperature

Active Publication Date: 2016-03-16
李大海
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the patent CN102618740A, a method for preparing silicon carbide aluminum matrix composite materials by powder metallurgy is reported. This method has cumbersome process, low production efficiency, high cost, and the obtained product has low density, uneven material, low mechanical properties, and is not easy to form. Shortcomings such as thin walls; In the patent CN103160702A, a method for in-situ composite preparation of silicon carbide particle-reinforced aluminum-based composite materials is disclosed. After mechanical mixing, in-situ generation of silicon carbide powder reinforced aluminum matrix composites in the vacuum sintering process has many limitations, high cost, unsuitable for large-scale production, high raw material requirements, and cumbersome processes.

Method used

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  • Preparing method for aluminum base silicon carbide

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A preparation method of aluminum-based silicon carbide:

[0052] 1) Preparation of SiC / Al slurry:

[0053]First, according to SiC micropowder 50wt%, 7wt% plasticizer, 3wt% dispersant, 10% and 40wt% water ratio, the SiC slurry with a solid content of 50% is prepared, wherein the plasticizer is polyethylene glycol, The dispersant is polymethacrylic acid amine; the average particle size of SiC micropowder is 7 microns;

[0054] Then add aluminum powder according to the mass ratio of SiC:Al=1:1, the average particle size of aluminum powder is 13 microns, ball mill for 16 hours, and mix uniformly to obtain SiC / Al slurry.

[0055] 2) Tape casting:

[0056] After vacuum defoaming the SiC / Al slurry obtained in step 1), add 1% of the ammonium persulfate initiator and 2% of the acrylamide monomer by weight of the slurry, mix evenly, and cast to obtain SiC / Al Al cast film.

[0057] 3) Bisque firing the cast film at 300°C to obtain a SiC / Al biscuit;

[0058] 4) Vacuum sinterin...

Embodiment 2

[0060] A preparation method of aluminum-based silicon carbide:

[0061] 1) Preparation of SiC / Al slurry:

[0062] First according to SiC micropowder 55wt%, the plasticizer of 10wt%, the dispersant of 1wt% and the water ratio of 34wt% prepare the SiC slurry that solid content is 55%, wherein plasticizer is by polyvinylpyrrolidone: polyvinyl alcohol: Glycerin=1:1:2 volume ratio composition, dispersant is ammonium citrate; SiC micropowder average particle size is 10 microns;

[0063] Then add aluminum powder and magnesium powder according to the mass ratio of SiC: Al: Mg=2: 1: 0.4, wherein the average particle diameter of aluminum powder is 20 microns, the average particle diameter of magnesium powder is 16 microns, ball milling 20h, mix uniformly, obtain SiC / Al paste.

[0064] 2) Tape casting:

[0065] After vacuum defoaming the SiC / Al slurry obtained in step 1), add 3% of the ammonium persulfate initiator and 4% of the acrylamide monomer by weight of the slurry, mix evenly, ...

Embodiment 3

[0069] A preparation method of aluminum-based silicon carbide:

[0070] 1) Preparation of SiC / Al slurry:

[0071] First according to SiC micropowder 60wt%, the plasticizer of 2wt%, the dispersant of 5wt% and the water ratio of 33wt% are prepared to obtain the SiC slurry that solid content is 60%, wherein plasticizer is by polyethylene glycol: glycerol=1 : 1 volume ratio, the dispersant is ammonium polyacrylate; the average particle diameter of the SiC micropowder is 3 microns;

[0072] Then add aluminum powder and magnesium powder according to the mass ratio of SiC: Al: Mg=1.5: 1: 0.37, wherein the average particle diameter of aluminum powder is 5 microns, the average particle diameter of magnesium powder is 5 microns, ball milling 10h, mix uniformly, A SiC / Al slurry is obtained.

[0073] 2) Tape casting:

[0074] After vacuum defoaming the SiC / Al slurry obtained in step 1), add 2% of the ammonium persulfate initiator and 3% of the acrylamide monomer by weight of the slurry...

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Abstract

A preparing method for an aluminum base silicon carbide comprises the steps that firstly, SiC / Al slurry is prepared, SiC slurry is obtained through preparing of SiC micro powder, and aluminum powder and magnesium powder are added in proportion and are evenly mixed; secondly, tape casting is carried out, the SiC / Al slurry is subjected to defoaming, an initiating agent with the weight accounting for 1% to 3% of the total weight of the SiC / Al slurry and monomer with the weight accounting for 2% to 4% of the total weight of the SiC / Al slurry are added and are evenly mixed, and tape casting is carried out to obtain an SiC / Al cast film; thirdly, biscuiting is carried out on the cast film, wherein biscuiting is carried out on the casting film obtained in the second step, and an SiC / Al biscuit is obtained; and fourthly, vacuum sintering is carried out, and the SiC / Al biscuit is sintered in the vacuum state to obtain the aluminum base silicon carbide. The aluminum base silicon carbide is prepared through a gel tape casting method, obtained product components are evenly distributed, the porosity is low, the heat conduction rate is high, the magnesium powder is introduced, the sintering performance is improved, and the sintering temperature is reduced. The technology is simple, and energy consumption is low.

Description

technical field [0001] The invention relates to the technical field of manufacturing heat dissipation materials for light-emitting diodes, and more specifically relates to a method for preparing aluminum-based silicon carbide. Background technique [0002] With the leap of LED manufacturing technology and the higher performance requirements of devices, newer and higher requirements are put forward for packaging materials, and traditional materials are no longer suitable for the packaging of high power density devices. The aluminum, copper, kovar materials or semiconductor materials used in large quantities in the past cannot meet the requirements of good thermal conductivity and lightness, and the cost is high, which can no longer meet the needs of the existing high power density, which makes the thermal management of electronic devices an important issue. bottleneck. [0003] If the thermal management of electronic devices is not well resolved, it will lead to thermal fail...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C29/06C22C30/00C22C32/00
CPCC22C1/051C22C29/06C22C30/00C22C32/0052B22F3/1003B22F2998/10B22F1/10B22F3/22
Inventor 李大海彭建勋李钰
Owner 李大海
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