Inverted organic electroluminescent device and preparation method thereof
An electroluminescent device, an inverted technology, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unconsidered optical performance of devices and the influence of optical performance of inverted devices, and achieves good optical effects. , The effect of good electron injection ability and cost saving
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Embodiment 1
[0029] SiO 2 : silicon dioxide;
[0030] TiO 2 :Titanium dioxide
[0031] NPB: (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine);
[0032] C545T: 2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-10-(2-benzothiazolyl)-quinazino[9,9A, 1GH] coumarin;
[0033] MADN: 2-methyl-9,10-bis(naphthalen-2-yl)anthracene
[0034] Alq 3 : aluminum octahydroxyquinoline;
[0035] Al: aluminum.
[0036] The structure of the prepared device A1 is: Glass (substrate) / ITO (cathode layer) / TiO 2 : SiO 2 (electron injection layer) / Alq 3 (electron transport layer) / MADN: C545T (green fluorescent light-emitting layer) / NPB (hole transport layer) / MoO3( hole injection layer) / Al (anode layer).
[0037] The optical refractive index of the electron injection layer is 1.78.
[0038] The preparation method is as follows:
[0039] After selecting the glass substrate, prepare the ITO cathode layer, TiO 2 : SiO 2 Electron injection layer, Alq ...
Embodiment 2
[0050] ITO: indium tin oxide;
[0051] ZnO: zinc oxide;
[0052] MgF2: magnesium fluoride
[0053] NPB: (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine);
[0054] C545T: 2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-10-(2-benzothiazolyl)-quinazino[9,9A, 1GH] coumarin;
[0055] MADN: 2-methyl-9,10-bis(naphthalen-2-yl)anthracene
[0056] Alq 3 : aluminum octahydroxyquinoline;
[0057] Al: aluminum.
[0058] The structure of the prepared device A2 is: PEN (substrate) / ITO (cathode layer) / ZnO:MgF 2 (electron injection layer) / Alq 3 (electron transport layer) / Alq 3 : C545T (green fluorescent light-emitting layer) / NPB (hole transport layer) / WO3( hole injection layer) / Al (anode layer).
[0059] The optical refractive index of the electron injection layer is 1.82.
[0060] The preparation method is as follows:
[0061] After selecting the PEN substrate, prepare the ITO cathode layer, ZnO:MgF 2 Electron injection layer, Alq 3 electron transp...
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