Semiconductor structure and formation method thereof

Abstract

A semiconductor structure and a formation method thereof are disclosed. The formation method of the semiconductor structure comprises the following steps of providing a substrate and forming a through hole in the substrate; forming amorphous silicon layers on a through hole bottom and a sidewall surface; forming a barrier layer on an amorphous silicon layer surface, wherein the barrier layer preferentially orients a crystal plane (111); and forming a metal layer on a barrier layer surface, wherein the metal layer fills in the through hole and the metal layer preferentially orients the crystal plane (111). In the invention, after the amorphous silicon layers are formed on the silicon through hole bottom and the sidewall surface, the barrier layer and the metal layer which preferentially orient the crystal plane (111) are formed on the amorphous silicon layer surface so that an electromigration resistance capability of the metal layer is increased; a resistance of the metal layer is reduced; an electromigration resistance capability of the semiconductor structure is increased; an RC delayed effect of the semiconductor structure is reduced and electric performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions, semiconductor chips are developing towards higher integration. The higher the integration degree of the semiconductor chip, the smaller the characteristic size (CD: Critical Dimension) of the semiconductor device. [0003] A three-dimensional integrated circuit (IC: Integrated Circuit) is manufactured using advanced chip stacking technology, which is to stack chips with different functions into an integrated circuit with a three-dimensional structure. Compared with two-dimensional integrated circuits, the stacking technology of three-dimensional integrated circuits can not only shorten the signal trans...

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Problems solved by technology

[0006] However, the electrical performance of existing semiconductor structures formed by TSV technology needs to be improved

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