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Low insertion loss self-biased microstrip circulator based on magnetic nanowire array

A nanowire array, insertion loss technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve problems such as large insertion loss, and achieve the effects of low insertion loss, high isolation, and lower dielectric constant

Inactive Publication Date: 2019-03-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The existing circulators designed based on nanowire soft magnetic materials all adopt a single-layer nanowire array structure, which has a large insertion loss due to the limitations of the nanowire array itself.

Method used

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  • Low insertion loss self-biased microstrip circulator based on magnetic nanowire array
  • Low insertion loss self-biased microstrip circulator based on magnetic nanowire array
  • Low insertion loss self-biased microstrip circulator based on magnetic nanowire array

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Embodiment

[0023] This embodiment includes microstrip Y-junction matching line 1, hexagonal prism dielectric layer 2 with a cylindrical through hole in the center, metal bottom electrode 3 and multi-layer cylindrical central junction 4 composed of four major parts. The central junction is a multi-layer structure, the upper and lower layers are insulating layers, and the middle is an array layer of three layers of Fe nanowires deposited with a porous alumina template. The three-layer array layers are separated by two layers of air layers. Neglected spacers to support the entire structure.

[0024] The nanowires used in the present invention are prepared by depositing Fe nanowires in a porous alumina template with a thickness of 70um, a nanopore diameter of about 80nm, and a void ratio of 60% by the electrochemical deposition method, and the measured length of the nanowires is about 60um, the remanence (4πMr) is 4200gauss, the high frequency spectrum of magnetic permeability and high frequ...

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Abstract

A low insertion loss self-biased microstrip circulator based on a magnetic nanowire array belongs to the field of microwave passive devices. The invention includes a microstrip Y-junction matching line, a hexagonal dielectric layer with a cylindrical through hole in the center, a metal bottom electrode and The cylindrical central junction is characterized in that the cylindrical central junction includes a top insulating layer and a bottom insulating layer, and at least two nanowire array layers between the top insulating layer and the bottom insulating layer, and between adjacent nanoarray layers Between is the air layer. The center junction of the circulator of the present invention adopts three layers of magnetic nanowire array layers deposited with porous alumina templates, and the layers are separated by an air layer, so as to achieve the purpose of reducing the overall dielectric constant of the center junction, which has the characteristics of X-band in the microwave frequency band Low insertion loss and high isolation.

Description

technical field [0001] The invention belongs to the field of microwave passive devices, and in particular relates to the design of a microwave circulator with self-bias and low insertion loss that can be applied to microwave integrated circuits. Background technique [0002] The circulator is one of the indispensable devices in the microwave circuit system, and it is a multi-port non-reciprocal device with directional transmission characteristics. The development direction of the circulator is miniaturization, high frequency band and wide frequency band. Traditional ferrite circulators cannot be self-biased, and usually require an external permanent magnet to provide a bias field, which severely restricts the development of miniaturized circulators. Therefore, magnetic materials with large anisotropy field and large remanence ratio, which can realize self-bias, have received extensive attention. Among them, the soft magnetic nanowire material prepared based on nanotechnolo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/383
Inventor 韩满贵涂宽周辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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