4H-SiC metal semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention discloses a 4H-SiC metal semiconductor field effect transistor and a manufacturing method thereof. The field effect transistor comprises a 4H-silicon carbide SiC semi-insulating substrate, a P-type buffer layer and an N-type channel layer, wherein the P-type buffer layer covers the 4H-silicon carbide SiC semi-insulating substrate; the N-type channel layer covers the P-type buffer layer and comprises a first N-type channel region, a second N-type channel region and a third N-type channel region; the second N-type channel region is formed between the first N-type channel region and the second N-type channel region; a source cap layer and a drain cap layer are formed on two sides of the surface of the N-type channel layer; a source is formed on the surface of the source cap layer; a drain is formed on the surface of the drain cap layer; and a gate electrode is formed on the N-type channel layer and close to the source cap layer. According to the 4H-SiC metal semiconductor field effect transistor, the technical problems that the existing 4H-SiC metal semiconductor field effect transistor is unstable in current and low in breakdown voltage are solved.

Description

technical field [0001] The invention relates to the field of field effect transistors, in particular to a 4H-SiC metal semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] Due to its outstanding material and electrical properties, such as large band gap, high saturation electron migration velocity, high breakdown electric field, high thermal conductivity, etc., silicon carbide SiC is used in high frequency and high power device applications, especially at high temperature It has great potential in the application of high-frequency and high-power devices in harsh environments such as , high-voltage, aerospace, and satellite. SiC plays a major role in the application of microwave power devices, especially metal-semiconductor field-effect transistors (MESFETs). [0003] Breakdown voltage is an important index to measure the performance of 4H-SiCMESFET devices. At present, the improvement of the breakdown voltage of 4H-SiCMESF...

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Problems solved by technology

[0005] Embodiments of the present invention provide a 4H-SiC metal-semiconductor field-effect transistor and a manufacturing method thereof, so as to at least solve the technical problems of current instability and low breakdown voltage of the existing 4H-SiC metal-semiconductor field-effect transistor

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