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Method for controllable growing of two-dimensional chalcogen compound atomic-scale film on metal substrate

A technology of chalcogenides and metal substrates, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of poor controllability, difficulty in obtaining high-quality two-dimensional chalcogenide atomic-level thin films on a large scale, Discontinuity etc.

Active Publication Date: 2015-12-16
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the preparation of two-dimensional chalcogenide atomic-scale thin films mainly includes micromechanical exfoliation, molybdenum compound ((NH 4 ) 2 MoS 2 ) pyrolysis method, metal oxide and sulfur source reaction method, etc. These methods have low yield and poor controllability. Facile large-scale access to high-quality two-dimensional chalcogenide atomic-scale thin films

Method used

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  • Method for controllable growing of two-dimensional chalcogen compound atomic-scale film on metal substrate
  • Method for controllable growing of two-dimensional chalcogen compound atomic-scale film on metal substrate
  • Method for controllable growing of two-dimensional chalcogen compound atomic-scale film on metal substrate

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Embodiment 1

[0024] A method for preparing an atomic-level chalcogen compound film by chemical vapor deposition, comprising the following preparation steps:

[0025] (1) The molybdenum foil substrate with a thickness of 20 microns is first annealed at 1400 degrees for more than 10 hours in a hydrogen environment with a flow rate of 50sscm;

[0026] (2) Cut the annealed molybdenum foil into 3.5×2.5cm 2 The small piece is placed in a quartz tube furnace;

[0027] (3) Weigh 0.5 gram of sulfur powder, put it into the front end of the quartz tube, where it is heated with a heating tape;

[0028] (4) Seal the two ends of the quartz tube and vacuumize for 20 minutes to get rid of the remaining oxygen in the pipeline;

[0029] (5) After connecting one end of the quartz tube with the silicone tube, seal it with vacuum pump oil;

[0030] (6) Open the valve of the argon cylinder, inject argon into the quartz tube, and make its flow rate be 10 sccm;

[0031] (7) Turn on the tube furnace temperatur...

Embodiment 2

[0039] A method for preparing an atomic-level chalcogen compound film by chemical vapor deposition, comprising the following preparation steps:

[0040] (1) The molybdenum foil substrate with a thickness of 20 microns is first annealed at 1400 degrees for more than 10 hours in a hydrogen environment with a flow rate of 50sscm;

[0041] (2) Cut the annealed molybdenum foil into 3.5×2.5cm 2 The small piece is placed in a quartz tube furnace;

[0042] (3) Weigh 0.5 gram of sulfur powder, put it into the front end of the quartz tube, where it is heated with a heating tape;

[0043] (4) Seal the two ends of the quartz tube and vacuumize for 20 minutes to get rid of the remaining oxygen in the pipeline;

[0044] (5) After connecting one end of the quartz tube to the silicone tube, seal it with vacuum pump oil;

[0045] (6) Open the valve of the argon cylinder, inject argon into the quartz tube, and make its flow rate be 10 sccm;

[0046] (7) Turn on the tube furnace temperature ...

Embodiment 3

[0054] A method for preparing an atomic-level chalcogen compound film by chemical vapor deposition, comprising the following preparation steps:

[0055] (1) The molybdenum foil substrate with a thickness of 20 microns is first annealed at 1400 degrees for more than 10 hours in a hydrogen environment with a flow rate of 50sscm;

[0056] (2) Cut the annealed molybdenum foil into 3.5×2.5cm 2 The small piece is placed in a quartz tube furnace;

[0057] (3) Weigh 0.5 gram of selenium powder, put into the front end of quartz tube, use heating band to heat in this place;

[0058] (4) Seal the two ends of the quartz tube and vacuumize for 20 minutes to get rid of the remaining oxygen in the pipeline;

[0059] (5) After connecting one end of the quartz tube with the silicone tube, seal it with vacuum pump oil;

[0060] (6) open hydrogen and argon bottle valve, inject hydrogen and argon in quartz tube, make its flow rate be 2sccm and 18sccm;

[0061] (7) Turn on the tube furnace tem...

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Abstract

The invention discloses a method for controllable growing of a two-dimensional chalcogen compound atomic-scale film on a metal substrate. The method comprises the following steps that the metal substrate and a reaction source are arranged in a vacuum reaction device, vacuumizing is carried out, and the reaction source is heated at the temperature higher than the melting point of the reaction source and volatilized; and the reaction source is transported to the metal substrate through carrier gas, the reaction source is kept for 1-180 min under the reaction temperature of 250-1,000 DEG C, the reaction happens between the metal substrate and the reaction source, and the thickness-controllable two-dimensional chalcogen compound atomic-scale film is obtained. A chemical vapor deposition method is adopted, the atomic-scale film controllably grows on the homogeneous metal substrate directly through vulcanization, selenylation and tellurium forming, and accordingly the method for preparing a large-area chalcogen compound film is provided.

Description

technical field [0001] The invention belongs to the field of preparation of two-dimensional thin films, in particular to a method for preparing atomic-level chalcogen compound thin films by chemical vapor deposition. Background technique [0002] Since its discovery in 2004, graphene has attracted much attention due to its excellent electrical, mechanical, optical and thermal properties. However, the graphene material in the intrinsic state is a semimetal with zero bandgap, and the devices constructed from it have high leakage current, which severely limits its application in switching and logic devices. Since 2011, two-dimensional transition metal chalcogenides such as molybdenum sulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), tungsten sulfide (WS 2 ), tungsten selenide (WSe 2 ), etc., their structure is similar to that of graphene, but their semiconducting properties have attracted extensive attention. For example, as the thickness of molybdenum disulfide decreases, ...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44
Inventor 台国安曾甜尤运城王旭峰胡廷松郭万林
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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