Method for preparing aluminium nitride powder through high-temperature fusion process

Abstract

A method for preparing aluminium nitride powder through high-temperature fusion process is realized through the following operation steps: (1) introducing a mixed gas of ammonia gas and nitrogen into a fusion furnace, and controlling the feed speed of the ammonia-gas nitrogen mixed gas to be 25 L / min-35 L / min, and discharging air in the furnace; (2) heating the fusion furnace body to 1100 DEG C-2200 DEG C, keeping warm at a set temperature, and controlling the reaction temperature to be higher than the melting point of aluminium powder, and guaranteeing the aluminium powder to be liquefied during reaction; (3) adding a high-purity aluminium powder into the fusion furnace body, also feeding ammonia gas and nitrogen, controlling the feed speed of ammonia-gas nitrogen mixed gas to be 280 L / min-320 L / min, and enabling the aluminium powder to be melt and reacted; (4) controlling the temperature of a lower end of a cooling area of a cooling furnace to be lower than 400 DEG C; (5) transferring reacted aluminium powder into the cooling furnace for cooling, and enabling collected aluminium powder to enter a bag filter; and (6) introducing tail gas into tail-gas processing equipment by a blower. The employed method is low in cost, and the prepared aluminium nitride powder is high in purity, high in sphericility, narrow in particle size distribution and free of caking phenomenon.

Description

technical field [0001] The invention relates to a method for preparing aluminum oxide powder, in particular to a method for preparing aluminum nitride powder by a high-temperature melting method. Background technique [0002] At present, with the rapid development of the electronics industry and LED industry, devices are gradually developing towards miniaturization and high power, which will inevitably lead to high heat generation. The application of high thermal conductivity materials can effectively solve the heat dissipation problem of high power devices . At present, high thermal conductivity substrates that have been used in practical and development applications include alumina, silicon carbide, beryllium oxide, aluminum nitride, CVD-BN, etc. Alumina is low in cost, but its relatively low thermal conductivity limits its use in high-end applications. Although silicon carbide has high thermal conductivity, it has large capacitance, low resistivity, and poor insulation....

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Problems solved by technology

The direct nitriding process is simple, but there are problems of easy agglomeration of the product and incomplete nitriding; the self-propagating method has a fast reaction speed and low cost, but the reaction process is difficult to control and the product purity is low; the carbothermal reduction method can prepare high-grade powder, However, the reaction temperature is high, the time is long, and secondary carbon removal is required, so the cost is high; gas phase method and organic salt cracking method can prepare high-purity, ultra-fine aluminum nitride powder, but the cost of raw materials is expensive, and it cannot be widely used in industry.

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