Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of silicon carbide hollow sphere

A technology of hollow spheres and silicon carbide, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of high raw material requirements, difficult material shape control, complex process of silicon carbide hollow spheres, etc., to achieve simple steps, The effect of high stability and easy operation

Inactive Publication Date: 2018-02-13
CHINA JILIANG UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to solve the problems of complex process, high raw material requirements, and difficulty in material shape control in the current preparation process of silicon carbide hollow spheres.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Mix and stir 20 grams of phenol, 34.5 grams of 37wt.% formaldehyde aqueous solution and 4.5 grams of sodium hydroxide for 10 minutes, slowly heat up to 65 degrees and react for 1 hour, cool to room temperature and distill under reduced pressure to obtain a prepolymer.

[0023] 2. Dissolve 50 grams of F127 and 32.5 grams of 0.1 mol / liter hydrochloric acid solution in 250 grams of ethanol, stir to obtain a clear solution, then add 68 grams of tetraethyl orthosilicate and 32.5 grams of prepolymer, and stir to obtain a uniform solution. The solution was transferred to a Petri dish and placed in an oven overnight to obtain a transparent orange-yellow film material.

[0024] 3. Grind the film material and pass it through a 200-mesh sieve, take 10 grams of the sample, place it in a closed vacuum tube furnace equipped with a vacuum pump, first exhaust the furnace for 10 minutes to evacuate the furnace, and then introduce argon gas to maintain a flow rate of 120 ml / minute. ...

Embodiment 2

[0026] 1. Mix and stir 20 grams of phenol, 4.5 grams of sodium hydroxide and 34.5 grams of 37wt.% formaldehyde solution for 10 minutes, slowly heat up to 75 degrees and react for 2 hours, cool to room temperature and distill under reduced pressure to obtain a prepolymer.

[0027] 2. Dissolve 50 grams of F127 and 32.5 grams of 0.1 mol / liter hydrochloric acid solution in 250 grams of ethanol, stir to obtain a clear solution, then add 68 grams of tetraethyl orthosilicate and 32.5 grams of prepolymer, and stir to obtain a uniform solution. The solution was transferred to a Petri dish and placed in an oven overnight to obtain a transparent orange-yellow film material.

[0028] 3. Grind the film material and pass it through a 200-mesh sieve. Take 10 grams of the sample and place it in a closed vacuum tube furnace equipped with a vacuum pump. First exhaust the furnace for 10 minutes to evacuate the furnace, and then introduce argon gas to maintain a flow rate of 100 ml. / minute. Ris...

Embodiment 3

[0030] 1. Mix and stir 20 grams of phenol, 4.5 grams of sodium hydroxide, 10 grams of paraformaldehyde and 30 milliliters of water for 10 minutes, slowly raise the temperature to 75 degrees and react for 1 hour, cool down to room temperature and distill under reduced pressure to obtain a prepolymer.

[0031] 2. Dissolve 52 grams of F127 and 32.5 grams of 0.2 mol / liter hydrochloric acid solution in 260 grams of ethanol, stir to obtain a clear solution, then add 68 grams of tetraethyl orthosilicate and 32.6 grams of prepolymer, and stir to obtain a uniform solution. The solution was transferred to a Petri dish and placed in an oven overnight to obtain a transparent orange-yellow film material.

[0032] 3. After grinding, sieve through 200 meshes, take 5 grams of sample, and place it in a closed vacuum tube furnace equipped with a vacuum pump. First exhaust the furnace for 10 minutes to evacuate the furnace, and then feed argon gas to maintain a flow rate of 120 ml / min. Raise to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation process of a silicon carbide hollow sphere material, aiming at overcoming the problems in the prior art of complicated preparation process, high raw material requirement and difficult shape control. The main steps of the present invention are (1), mixing and stirring phenol, formaldehyde solution and alkali, and obtaining a prepolymer by distillation under reduced pressure after the reaction; (2), stirring a polymer template agent and an acid solution to obtain a clear solution, and then adding orthosilicon Ethyl acetate and prepolymer, after stirring, move to a petri dish, and place the film material in an oven; (3), grind the film material and sieve it, place it in a vacuum tube furnace, and feed it with argon to roast to 800- 1350°C, cooled to 500-800°C and then roasted with oxygen, cooled to room temperature to obtain a silicon carbide hollow sphere product, which was placed in a glove box. The invention has the advantages of simple reaction process, easy control of appearance and convenient operation.

Description

technical field [0001] The invention relates to the technical field of silicon carbide material production, in particular to a preparation process of silicon carbide hollow spheres, belonging to the scope of inorganic material preparation. Background technique [0002] Silicon carbide has excellent high-temperature mechanical properties (such as high strength, high hardness, thermal shock resistance) and high temperature resistance, oxidation resistance, wear resistance, corrosion resistance, radiation resistance, etc., and has good electric heating and semiconductor properties. Therefore, As an engineering structural material, silicon carbide has a wide range of applications in the fields of high-temperature ceramic engines, metal and ceramic particle reinforcement and toughening, ceramic knives, wear-resistant materials, and radiation-resistant materials for nuclear power plants. As a functional material and the third-generation wide-bandgap semiconductor material in Natio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/977
Inventor 金顶峰王晴吴盼盼王巧金红晓王新庆彭晓岭洪波葛洪良
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com