Double-spray-head MOCVD reaction chamber

Abstract

The invention discloses a metal organic chemical vapor deposition reaction chamber. The reaction chamber comprises a cavity, an upper air inlet spray head, a lower air inlet spray head, a tray assembly and a heater. The cavity comprises a top plate, a bottom plate and a side wall, and the fundamentally-sealed chamber is defined by the top plate, the bottom plate and the side wall. The upper air inlet spray head is arranged on the upper portion in the cavity of the reaction chamber and communicated with an air source. The lower air inlet spray head is arranged on the lower portion in the cavity of the reaction chamber and communicated with the air source. The tray assembly is fixedly arranged in the middle in the reaction cavity and comprises an upper base tray and a lower base tray. The upper base tray and the lower base tray are arranged oppositely, and the upper base tray is opposite to the upper air inlet spray head. The lower base tray is opposite to the lower air inlet spray head. The heater is located between the upper base tray and the lower base tray. By means of the reaction chamber, the space utilization rate, the gas utilization rate and the heat energy utilization rate can be effectively improved.

Description

technical field [0001] The invention relates to compound semiconductor thin film deposition equipment, in particular to the reaction chamber structure of metal organic chemical vapor deposition (MOCVD) equipment for preparing gallium nitride-based semiconductors. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD) equipment is used for the preparation of compound semiconductor gallium nitride, gallium arsenide, indium phosphide, zinc oxide and other functional structural materials, especially suitable for large-scale industrial production, so It has become the key equipment for the production and research of compound semiconductor epitaxy materials, and the main means for the current production of semiconductor optoelectronic devices and microwave device materials, with a wide range of applications. MOCVD growth is a non-equilibrium growth technique that uses metal atoms such as alkyl organic source reactants (MO source) and hydrides (such as NH 3 ...

AI Technical Summary

Problems solved by technology

[0003] In order to increase the production capacity of metal-organic meteorological chemical deposition equipment, the method of enlarging the area of ​​the substrate tray is usually used in the prior art. However, with the increase of the area of ​​the substrate tray, the size of the reaction chamber is also getting larger, which increases the capacity of the equipment. Cost and technical complexity

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