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Silver-germanium-silicon heterogeneous hierarchical structure array, and preparation method and application of array

A hierarchical structure and array technology, applied in the direction of material excitation analysis, nanotechnology for materials and surface science, gaseous chemical plating, etc., can solve the problems of unfavorable adsorption of substances to be detected, small surface area, and few precious metal nanoparticles. Achieve the effects of good consistency and repeatability of detection, scientific preparation method and reasonable structure

Inactive Publication Date: 2015-09-09
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When this product is used as a surface-enhanced Raman scattering substrate for the detection of organic matter, although it has the characteristics of uniform shape and good signal repeatability, it also has shortcomings. First, the germanium wafer used as the substrate is only two-dimensional structure, resulting in a smaller surface area, which leads to fewer noble metal nanoparticles loaded and is not conducive to a large amount of adsorption of the substance to be detected; secondly, the preparation method cannot obtain a substrate with high SERS activity

Method used

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  • Silver-germanium-silicon heterogeneous hierarchical structure array, and preparation method and application of array
  • Silver-germanium-silicon heterogeneous hierarchical structure array, and preparation method and application of array
  • Silver-germanium-silicon heterogeneous hierarchical structure array, and preparation method and application of array

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Embodiment 1

[0036] The specific steps of preparation are:

[0037] In step 1, firstly mix 81 g / L of nickel nitrate solution and 2.2 g / L of graphene oxide solution in a ratio of 1:1 by volume to obtain a mixed solution. Then, the hexagonal silicon micron hexagonal prism array obtained by using photolithography and deep silicon etching technology is immersed in the mixed solution for 25 minutes to obtain a hexagonal silicon micron hexagonal prism array whose surface is modified with nickel nitrate.

[0038] Step 2: After placing the hexagonal silicon micron hexagonal prism array modified with nickel nitrate on the surface of the chemical vapor deposition furnace cavity, the chemical vapor deposition furnace cavity and gas path are sequentially vacuumed and cleaned with argon. Subsequently, the furnace cavity was first placed under an argon atmosphere, and the temperature was increased from room temperature to 290°C at a temperature increase rate of 10°C / min. Then the furnace chamber was kept in...

Embodiment 2

[0040] The specific steps of preparation are:

[0041] In step 1, first, 86 g / L of nickel nitrate solution and 2.1 g / L of graphene oxide solution are mixed in a ratio of 1:1 by volume to obtain a mixed solution. Then, the hexagonal silicon micron hexagonal prism array obtained by using photolithography and deep silicon etching technology was immersed in the mixed solution for 26 minutes to obtain a hexagonal silicon micron hexagonal prism array whose surface was modified with nickel nitrate.

[0042] Step 2: After placing the hexagonal silicon micron hexagonal prism array modified with nickel nitrate on the surface of the chemical vapor deposition furnace cavity, the chemical vapor deposition furnace cavity and gas path are sequentially vacuumed and cleaned with argon. Subsequently, the furnace cavity was first placed under an argon atmosphere, and the temperature was increased from room temperature to 300°C at a temperature increase rate of 10°C / min. Then the furnace chamber was ...

Embodiment 3

[0044] The specific steps of preparation are:

[0045] Step 1. First, mix 91 g / L of nickel nitrate solution and 2 g / L of graphene oxide solution in a ratio of 1:1 by volume to obtain a mixed solution. Then, the hexagonal silicon micron hexagonal prism array obtained by using photolithography and deep silicon etching technology was immersed in the mixed solution for 27 minutes to obtain a hexagonal silicon micron hexagonal prism array whose surface was modified with nickel nitrate.

[0046] Step 2: After placing the hexagonal silicon micron hexagonal prism array modified with nickel nitrate on the surface of the chemical vapor deposition furnace cavity, the chemical vapor deposition furnace cavity and gas path are sequentially vacuumed and cleaned with argon. Subsequently, the furnace cavity was first placed under an argon atmosphere, and the temperature was increased from room temperature to 310°C at a temperature increase rate of 10°C / min. Then the furnace chamber was kept in a d...

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Abstract

The invention discloses a silver-germanium-silicon heterogeneous hierarchical structure array, and a preparation method and an application of the array. The array is an array of silicon micron hexagonal prisms in hexagonal arrangement, wherein the silicon micron hexagonal prisms forming the array of silicon micron hexagonal prisms in hexagonal arrangement are provided with germanium nanocones, surfaces of which is decorated with silver nanoparticles. The preparation method comprises: mixing a nickel nitrate solution and an oxidized grapheme solution to obtain a mixed liquid; immersing the array of silicon micron hexagonal prisms in hexagonal arrangement obtained via photoetching and deep silicon etching technique in the mixed liquid to obtain the array of silicon micron hexagonal prisms, surfaces of which are decorated with nickel nitrate, in hexagonal arrangement; then applying a chemical vapor deposition method to enable the array of silicon micron hexagonal prisms, surfaces of which are decorated with nickel nitrate, in hexagonal arrangement to be deposited with the germanium nanocones; and immersing the array of silicon micron hexagonal prisms, surfaces of which are decorated with the germanium nanocones, in a silver nitrate solution to obtain the target product. The silver-germanium-silicon heterogeneous hierarchical structure array can be used as an active matrix of SERS, and is widely applicable to fast detection of the fields, such as environment, chemistry, and biology.

Description

Technical field [0001] The invention relates to a heterogeneous hierarchical structure array and a preparation method and use thereof, in particular to a silver-germanium-silicon heterogeneous hierarchical structure array and a preparation method and use thereof. Background technique [0002] Surface Enhanced Raman Scattering (SERS) technology has the characteristics of high sensitivity and "fingerprint recognition", and has obvious advantages in the rapid detection of trace molecules. Therefore, it has broad application prospects in the fields of environment, chemistry, biology and so on. The key to applying SERS technology is to prepare a high-performance SERS substrate, that is, a substrate with high SERS activity, signal uniformity and signal repeatability. At present, modifying precious metal nanoparticles on the surface of uniform nanostructures is one of the main technical means to obtain high-performance SERS substrates. The uniform nanostructure not only contributes to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65C23C16/18B22F9/24B82Y30/00B82Y40/00
Inventor 刘菁孟国文李中波
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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