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Growth device and growth method of crystals

A technology of growth device and growth method, which is applied in the field of crystal growth devices, can solve problems such as difficult crystal growth and surface tension crystal growth, and achieve the effects of good crystallization performance, small difference in single crystal quality, and high single crystal repetition rate

Active Publication Date: 2015-09-09
威科赛乐微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Crystal growth by optical floating zone method is carried out in optical floating zone furnace. For example, the Chinese patent with publication number CN 104389013 A discloses a device for growing crystal by optical floating zone method. However, this device cannot grow crystals with low surface tension, and it is difficult to grow crystals that are easily oxidized

Method used

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  • Growth device and growth method of crystals
  • Growth device and growth method of crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] use as figure 1 In the growth device shown, there are two shadowless halogen lamps, symmetrically distributed, the power of the halogen lamp is 500W, and the voltage is 240V; the infrared light emitted by the shadowless halogen lamp is gathered in the center of the crystal growth chamber through the gold-plated stainless steel focusing screen; the crucible It is a transparent quartz crucible with an inner diameter of 6mm, a length of 80mm, and a wall thickness of 2mm. Lift and rotate on the support rod 5. There is a seed crystal groove at the lower end of the crucible, the diameter of the seed crystal groove is 4mm, and the length is 10mm. The inclination angle of the inner wall of the crucible is 1°.

[0060] The seed crystal in the direction of cleaning (111) is placed in the seed crystal tank, the length of the seed crystal is 10mm, and the diameter is 4mm. After melting the 5N 8g germanium polycrystalline raw material in other quartz crucibles, pour it into the q...

Embodiment 2

[0064] use figure 1 In the growth device shown, there are two shadowless halogen lamps, symmetrically distributed, the power of the halogen lamp is 1000W, and the voltage is 240V; the infrared light emitted by the shadowless halogen lamp is gathered in the center of the crystal growth chamber through the gold-plated stainless steel focusing screen; the crucible It is a transparent quartz crucible with an inner diameter of 5mm, a length of 80mm, and a wall thickness of 2mm. On a support pole that can be lifted and rotated. There is a seed crystal groove at the lower end of the crucible, the diameter of the seed crystal groove is 4mm, and the length is 5mm. The inclination angle of the inner wall of the crucible is 3°.

[0065] Under 4N argon atmosphere, 4g of 5N CaF 2 The powdered raw material was melted in a transparent quartz crucible and cooled in an argon atmosphere. Then take out the polycrystalline material, fill the seed crystal tank with seed crystal, the diameter o...

Embodiment 3

[0068] use as figure 1 In the growth device shown, there are two shadowless halogen lamps, symmetrically distributed, the power of the halogen lamp is 650W, and the voltage is 240V; the infrared light emitted by the shadowless halogen lamp is gathered in the center of the crystal growth chamber through the gold-plated stainless steel focusing screen; the crucible It is a transparent quartz crucible with an inner diameter of 8mm, a length of 80mm, and a wall thickness of 2mm. The surface of the crucible is smooth; the crucible is placed on the crucible holder located on the vertical line in the center of the crystal growth chamber, and the stainless steel crucible holder is firmly fixed to the crucible; the crucible holder is placed On a support pole that can be lifted and rotated. There is a seed crystal groove at the lower end of the crucible, the diameter of the seed crystal groove is 4mm, and the length is 10mm. The inclination angle of the inner wall of the crucible is 2°...

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Abstract

The invention provides a growth device of crystals. The growth device comprises a spotlight screen, an infrared light source arranged in the spotlight screen, a transparent crucible and a supporting rod for supporting crucible, wherein the infrared light source is arranged on the periphery of the crucible, and the supporting rod is connected with the crucible by virtue of a crucible support. The transparent crucible is used as a place for the growth of the crystal. By adopting the growth device, not only can the crystal in a conventional optical floating area method grow, but also the crystal with low growth surface tension, crystal likely to oxidize and crystal with volatile component can grow, the experiment result shows that the crystallization performance of the crystal obtained by the growth device is good and has no defect such as bubbles, the repetition rate of single crystals is high, and the quality difference of the single crystals in different batches is small. The crystal formation rate is 90 to 100 percent. The invention also provides a growth method of the crystal.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a crystal growth device and a growth method. Background technique [0002] The traditional melt method crystal growth techniques include pulling method, descent method, floating zone method, Kyropoulos method, temperature gradient method, heat exchange method, cold crucible method, guided mode method, flame method, etc. [0003] These crystal growth techniques that have been developed so far still have certain limitations. The pulling method and the guided mode method can be used for real-time observation when growing crystals, but it is difficult to grow crystals with inconsistent melting or low thermal conductivity; the descent method, temperature gradient method and heat exchange method can grow crystals with low thermal conductivity, However, it is impossible to observe the crystal growth in real time, and it is also impossible to grow crystals with incons...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/22
Inventor 狄聚青朱刘胡丹
Owner 威科赛乐微电子股份有限公司
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