Coated glass and use thereof
A technology of coated glass and glass substrate, applied in the direction of glass/slag layered products, layered products, chemical instruments and methods, etc., can solve the problem of low refractive index of the medium layer, unstable physical and chemical properties, affecting the metal film layer, etc. problems, to achieve the effect of improving visual quality, ensuring stability, and widening the transmission range
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Embodiment 1
[0037] A coated glass, which contains a functional unit, the specific structure is: a first aluminum-doped silicon carbide film layer is stacked on the surface of a glass substrate 1, and the first aluminum-doped silicon carbide film layer is stacked and bonded outwards from the adjacent first aluminum-doped silicon carbide film layer. The first nickel-chromium alloy layer, the first silver layer, the second nickel-chromium alloy layer and the second aluminum-doped silicon carbide film layer.
[0038] In the above-mentioned aluminum-doped silicon carbide film layer, the weight percentage of aluminum is 5%, and the sputtering process of the aluminum-doped silicon carbide film layer is: the inert gas flow rate is about 600 SCCM, the reaction gas flow rate is 60 SCCM, and the vacuum degree is 3.3 ×10 -3 mba, the sputtering voltage is 600V, and other film layers are prepared by the existing vacuum magnetron sputtering process.
Embodiment 2
[0040] A kind of coated glass, which contains two functional units, the specific structure is: a first aluminum-doped silicon carbide film layer is laminated and combined on the surface of a glass substrate 1, and the first aluminum-doped silicon carbide film layer is laminated and bonded outwards from the adjacent first aluminum-doped silicon carbide film layer There are first nickel-chromium alloy layer, first silver layer, second nickel-chromium alloy layer, second aluminum-doped silicon carbide film layer, third nickel-chromium alloy layer, second silver layer, fourth nickel-chromium alloy layer, third Al-doped silicon carbide film layer.
[0041] In the above-mentioned aluminum-doped silicon carbide film layer, the weight percentage of aluminum is 10%, and the sputtering process of the aluminum-doped silicon carbide film layer is: the inert gas flow rate is about 600 SCCM, the reaction gas flow rate is 25 SCCM, and the vacuum degree is 3.3 ×10 -3 mba, the sputtering volt...
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