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Zr‑sb‑te series phase change material for phase change memory and preparation method thereof

A phase change memory and phase change material technology, applied in the field of microelectronics, can solve the problems of poor data retention and low thermal stability of phase change materials, and achieve the effects of high deposition state stability and good crystallization speed.

Active Publication Date: 2017-07-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a Zr-Sb-Te series phase change material for phase change memory and its preparation method, which is used to solve the problem of thermal stability of phase change materials in the prior art. Low performance and poor data retention

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  • Zr‑sb‑te series phase change material for phase change memory and preparation method thereof
  • Zr‑sb‑te series phase change material for phase change memory and preparation method thereof
  • Zr‑sb‑te series phase change material for phase change memory and preparation method thereof

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Embodiment 1

[0032] In this example, by preparing Zr 100-x-y (Sb 2 Te 3 ) (x+y) / 5Phase change material, and it is tested to further illustrate a technical solution of the present invention. Concrete preparation scheme is as follows:

[0033] (1) Using the dual-target co-sputtering method in magnetron sputtering to simultaneously prepare Zr on silicon substrates and thermally oxidized silicon substrates 100-x-y Sb x Te y Phase change materials, where 0<100-x-y<20, 0.5≤x / y≤4. The prepared Zr-Sb-Te series phase change materials are thin film materials, and the film thickness can be controlled at 100-250nm by adjusting the long film time.

[0034] Specifically, the following steps are included: under an argon atmosphere, using Sb 2 Te 3 Alloy target and Zr elemental target two target co-sputtering, in which, Sb 2 Te 3 The alloy target adopts DC power supply, and the Zr simple substance target adopts radio frequency power supply; the atomic percentage of Zr is adjusted by changing th...

Embodiment 2

[0046] In this example, by preparing Zr 100-x-y (Sb 2 Te) (x+y) / 3 Phase change material, and it is tested to further illustrate another technical solution of the present invention. Concrete preparation scheme is as follows:

[0047] (1) Using the three-target co-sputtering method in magnetron sputtering to simultaneously prepare Zr on silicon substrates and thermally oxidized silicon substrates 100-x-y Sb x Te y Phase change materials, where 0<100-x-y<20, 0.5≤x / y≤4.

[0048] Specifically, the following steps are included: under an argon atmosphere, using Sb 2 Te 3 Alloy target, Zr elemental target and Sb elemental target three target co-sputtering, wherein, Sb 2 Te 3The alloy target and the Sb elemental target adopt DC power supply, and the Zr elemental target adopts radio frequency power supply; the atomic percentage of Zr is adjusted by changing the radio frequency power, and the composition ratio of Sb and Te is adjusted by changing the DC power of the Sb elemental...

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Abstract

Zr-Sb-Te series phase-change materials used for phase-change memories and a preparing method thereof are provided. The general chemical formula of the Zr-Sb-Te series phase-change materials is Zr<100-x-y>Sb<x>Te<y>, wherein 0<100-x-y<20 and 0.5<=x / y<=4. The Zr-Sb-Te series phase-change materials have good crystallization speeds and high stability in deposition states, and can achieve reversible phase changes under the action of electrical pulses, wherein resistances before and after phase changes are different, the difference is large, "0" and "1" can be recognized, the Set voltage pulse width reaches 100 ns, the Reset voltage pulse width reaches 10 ns and the number of cycles reaches 10<4>, so that the Zr-Sb-Te series phase-change materials are ideal phase-change materials and can be used for manufacturing phase-change memory units. The Zr-Sb-Te series phase-change materials can be prepared by a plurality of methods, wherein a magnetron sputtering method is flexible and can conveniently prepare component-adjustable high-quality Zr<100-x-y>Sb<x>Te<y> composite films.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a Zr-Sb-Te series phase-change material used in a phase-change memory and a preparation method thereof. Background technique [0002] With the advancement of digitization and informatization in today's society, as a carrier of information, research on semiconductor memory has also made many breakthroughs. Currently, three kinds of memories occupying most of the semiconductor memory market share are flash memory (Flash), dynamic random access memory (Dynamic Random Access Memory, DRAM) and static random access memory (Static Random Access Memory, SRAM). However, with the continuous advancement of semiconductor process nodes from 90nm, 45nm, and 22nm, these three memory technologies are also facing the challenge of their respective physical limits. [0003] Phase-change memory (PCM) is a new type of memory based on phase-change materials. The reading / writing / erasing of its informatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/14H01L45/00
Inventor 宋志棠郑勇辉成岩刘卫丽宋三年朱敏
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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