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Sodium-rich P2-phase layered oxide material and preparation method and application thereof

An oxide and layered technology, applied in the field of materials, can solve the problems of sacrificing specific capacity and energy density, affecting the electrochemical performance of materials, and unstable storage for a long time, achieving high working voltage, low cost, and stable cycle.

Active Publication Date: 2015-07-22
BEIJING HINA BATTERY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When charged to 3.8V, the cycle performance of the material becomes poor, and better cycle performance can be obtained at the cut-off of 3.6V, but the specific capacity and energy density are sacrificed at the same time
In addition, most of the P2 phase compounds currently reported are unstable when stored in the air for a long time, and are easy to absorb water and change, which affects the electrochemical performance of the material.

Method used

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  • Sodium-rich P2-phase layered oxide material and preparation method and application thereof
  • Sodium-rich P2-phase layered oxide material and preparation method and application thereof
  • Sodium-rich P2-phase layered oxide material and preparation method and application thereof

Examples

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Embodiment 1

[0048] Embodiment 1 of the present invention provides a sodium-rich P2 phase layered oxide material, whose general chemical formula is: Na 0.72+δ Ni a mn b m c o 2+σ ;

[0049] Wherein, Ni and Mn are transition metal elements, M is an element for doping and replacing the transition metal position, and the M is specifically Mg 2+ , Zn 2+ , Cu 2+ , Mn 2+ ,Co 2+ , Al 3+ , Mn 3+ , Fe 3+ ,Co 3+ , V 3+ , Cr 3+ , Ti 4+ , Zr 4+ , Si 4+ , Sn 4+ , Ru 4+ , Nb 4+ , Mo 4+ One or more of them; the valence state of M is m, and the m is specifically monovalent, divalent, trivalent, tetravalent, pentavalent or hexavalent;

[0050] The δ, a, b, c, σ are the mole percentages of the corresponding elements respectively; the relationship between the δ, a, b, c, σ and m satisfies (0.72+δ)+2a+4b+mc =2(2+σ), and satisfy a+b+c=1; among them, -0.05<δ≤0.08; 0

[0051] in Na 0.72+δ Ni a mn b m c o 2+σ In the structure, Ni, M, and Mn res...

Embodiment 2

[0055] This example provides a method for preparing a sodium-rich P2 phase layered oxide material, specifically a solid phase method, such as figure 2 shown, including:

[0056] Step 201, mixing sodium carbonate with a required stoichiometric amount of 102wt% to 105wt% of sodium and required stoichiometric amounts of manganese dioxide, nickel oxide, and M oxide in proportion to form a precursor;

[0057] Specifically, the M is specifically M is specifically Mg 2+ , Zn 2+ , Cu 2+ , Mn 2+ ,Co 2+ , Al 3+ , Mn 3+ , Fe 3+ ,Co 3+ , V 3+ , Cr 3+ , Ti 4+ , Zr 4+ , Si 4+ , Sn 4+ , Ru 4+ , Nb 4+ , Mo 4+ one or more of.

[0058] Step 202, using a ball milling method to uniformly mix the precursor, or stir the precursor in a volatile organic solvent and then completely volatilize the organic solvent to obtain a precursor powder;

[0059] In step 203, the precursor powder is placed in a muffle furnace, and heat-treated in an air atmosphere at 800° C. to 1000° C. for 10 ...

Embodiment 3

[0062] This example provides a method for preparing a sodium-rich P2 phase layered oxide material, specifically a spray drying method, such as image 3 shown, including:

[0063] Step 301, disperse the required stoichiometric sodium carbonate of 102wt% to 105wt% sodium carbonate and the required stoichiometric manganese dioxide, nickel oxide and M oxide in ethanol or water, and stir evenly to form a slurry;

[0064]Specifically, the M is specifically Mg 2+ , Zn 2+ , Cu 2+ , Mn 2+ ,Co 2+ , Al 3+ , Mn 3+ , Fe 3+ ,Co 3+ , V 3+ , Cr 3+ , Ti 4+ , Zr 4+ , Si 4+ , Sn 4+ , Ru 4+ , Nb 4+ , Mo 4+ one or more of.

[0065] Step 302, spray drying the slurry to obtain a precursor mixture;

[0066] In step 303, the precursor mixture is placed in a muffle furnace, and heat-treated in an air atmosphere at 700° C. to 1000° C. for 10 to 24 hours to obtain the layered oxide material.

[0067] The preparation method of the layered oxide material provided in this embodiment can ...

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Abstract

The invention discloses a sodium-rich P2-phase layered oxide material and a preparation method and an application thereof. The material has a chemical general formula of Na<0.72+delta>NiMnM<c>O<2+sigma>, wherein Ni, M, and Mn together with the six nearest oxygen atoms form an octahedral structure and a transition metal layer through edge-shared arrangement; six oxygen atoms in two transition metal layers form a triangular prism-shaped structure; an alkali metal ion of Na+ is located between every two transition metal layers and occupies one position of the triangular prism; M is specifically on or more selected from Mg2+, Zn2+, Mn2+, Co2+, Al3+, Mn3+, Fe3+, Co3+, V3+, Cr3+, Ti4+, Zr4+, Si4+, Sn4+, Ru4+, Nb4+, and Mo4+; and delta, a, b, c, and sigma satisfy relationships of (0.72+delta)+2a+4b+mc=2(2+sigma) and a+b+c=1.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a sodium-rich P2 phase layered oxide material and its preparation method and application. Background technique [0002] At present, global environmental problems are becoming more and more serious, threatening the life and livelihood of the earth and human beings. The root cause lies in the generation and consumption of energy. Non-renewable energy sources such as coal, oil, and natural gas are consumed in large quantities; automobiles, heating, etc. continue to emit waste gas into the atmosphere, polluting the environment. Therefore, the development of renewable energy is extremely important. Renewable clean energy such as solar energy and wind energy have been widely used, but if this electric energy is directly input into the grid, it will bring a great impact to the grid. Therefore, energy conversion and storage have become the key issues. The ensuing question is how to...

Claims

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Application Information

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IPC IPC(8): H01M4/525H01M4/505H01M4/485H01M10/054
CPCH01M4/131H01M4/1391H01M4/505H01M4/525H01M10/054H01M2004/028H01M2220/10Y02E60/10
Inventor 胡勇胜徐淑银李云明陈立泉黄学杰
Owner BEIJING HINA BATTERY TECH CO LTD
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