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Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof

A gas sensor and field effect transistor technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, instruments, etc., can solve the problems of increased cost and complicated preparation process, and achieve the effects of stable detection, simple preparation process and easy implementation.

Inactive Publication Date: 2015-07-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] As we all know, the response characteristics of the field effect tube gas sensor to the target gas depends largely on the contact area between the semiconductor layer and the target gas. The existing method of increasing the contact area is mainly to prepare semiconductor materials into various nanostructures. Although the gas-sensing properties have been greatly improved, the preparation process is complicated and the cost is greatly increased

Method used

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  • Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof
  • Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof
  • Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] like figure 1The bottom-gate-top-contact structure is shown, and the material and thickness of each layer are as follows: the degradable substrate is plant fiber, the gate electrode is aluminum, and the thickness is 30 nm. The insulating layer is prepared by polyvinyl alcohol solution dissolved in water, and the thickness is The shellac layer is prepared by 10 wt% solution with a thickness of 50 nm, the semiconductor layer is zinc oxide with a thickness of 30 nm, the source electrode and the drain electrode are Au with a thickness of 30 nm, this structure can realize the Effective detection of nitrogen dioxide.

[0047] The preparation method is as follows:

[0048] ① Thoroughly clean the degradable substrate, and dry it with dry nitrogen after cleaning;

[0049] ② Sputtering gate electrodes on the surface of the degradable substrate;

[0050] ③ Spin coating an insulating layer on the gate electrode and process the insulating layer;

[0051] 4. adopt spin-coating me...

Embodiment 2

[0058] like figure 1 The bottom-gate top-contact structure is shown, and the materials and thicknesses of each layer are as follows: the degradable substrate is fibrin gel, the gate electrode is aluminum, and the thickness is 30 nm. The insulating layer is made of polyvinylpyrrolidone dissolved in water. The thickness is 500 nm, the shellac layer is prepared by 10 wt% solution, the thickness is 50 nm, the semiconductor layer is tin oxide, the thickness is 100 nm, the source electrode and the drain electrode are Au, the thickness is 80 nm, the structure can realize Effective detection of hydrogen sulfide.

[0059] Preparation method is like embodiment 1.

Embodiment 3

[0061] like figure 1 The bottom-gate top-contact structure is shown, and the materials and thicknesses of each layer are as follows: the degradable substrate is gelatin, the gate electrode is aluminum, and the thickness is 80 nm. The insulating layer is prepared by polyvinylpyrrolidone dissolved in glycerol. The thickness is 500 nm, the shellac layer is prepared by 20 wt% solution, the thickness is 50 nm, the semiconductor layer is zinc oxide, the thickness is 50 nm, the source electrode and the drain electrode are Au, the thickness is 50 nm, the structure can realize Effective detection of nitrogen dioxide.

[0062] Preparation method is like embodiment 1.

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Abstract

The invention discloses a field effect tube gas sensor based on shellac encapsulation / regulation and a preparation method thereof. The field effect tube gas sensor comprises a degradable substrate, a grid electrode, an insulation layer, a semiconductor layer, a source electrode and a drain electrode in sequence from top to bottom, wherein a shellac layer is arranged between the insulation layer and the semiconductor layer. The insulation layer is coated with shellac, and the shellac is good in bonding property and compactness and high in dielectric intensity, so that the erosion of water and oxygen on the degradable substrate and the insulation layer is prevented and the stability of the degradable substrate and the insulation layer is improved; at the same time, based on unique thermal plasticity and polymerization properties of the shellac, the shellac layer is directly treated, so that various morphologies of the semiconductor layer on the shellac can be obtained, the area of reaction with target gas is enlarged, and the gas response property is improved; the shellac belongs to natural materials and is wide in source and lower in cost; the field effect tube gas sensor adopts a material for realizing encapsulation and patterning and is easier to prepare, lower in cost, more environment-friendly and suitable for large-scale mass production, and the degradable substrate is practical.

Description

technical field [0001] The invention belongs to the technical field of sensor preparation, in particular to a field effect tube gas sensor based on shellac encapsulation / regulation and a preparation method thereof. Background technique [0002] With the rapid development of electronics and its application in the field of sensors, chemical sensors based on field effect transistors have become a research hotspot in the field of sensors, and their application to the detection of inorganic and volatile gases has been widely reported. Compared with the traditional gas sensor, the gas sensor based on the field effect tube structure has several notable advantages in addition to the advantages of high sensitivity and usability at room temperature: [0003] 1) Utilize the basic characteristics of transistors to convert difficult-to-detect high resistance changes into easily detectable current changes; [0004] 2) The sensitivity of the sensor can be adjusted by properly selecting th...

Claims

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Application Information

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IPC IPC(8): G01N27/414H01L29/06H01L21/336
Inventor 于军胜韩世蛟王煦郑丁
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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