Erbium silicate with sensitization effect as well as preparation method and application of erbium silicate

An erbium silicate and porous silicon technology, which is applied to the erbium silicate with sensitization effect and the field of preparation thereof, can solve the problems of no sensitized luminescence and weak luminescence, and achieve the effects of simple production process and mature technology

Active Publication Date: 2015-07-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the study of the photoexcitation spectrum of RTOA samples found that it only has a resonance excitation spectrum and no sensitized luminescence, which leads to the need for a specific wavelength and weak luminescence for its excitation light source.

Method used

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  • Erbium silicate with sensitization effect as well as preparation method and application of erbium silicate
  • Erbium silicate with sensitization effect as well as preparation method and application of erbium silicate
  • Erbium silicate with sensitization effect as well as preparation method and application of erbium silicate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In this embodiment, a p-type Czochralski monocrystalline silicon wafer with (100) crystal orientation is adopted, the silicon wafer is polished on one side, and the resistivity ρ=0.001~0.01Ω.cm, and the erbium soluble compound used is erbium chloride hexahydrate It is obtained by dissolving the substance in alcohol. The heat treatment conditions are that the first stage is heated to 900°C and kept for 4 minutes, and the atmosphere is O 2 ; The second section continues to heat up to 1200 ° C and keep it warm for 3 minutes, the atmosphere is Ar.

[0033] The specific preparation method is as follows:

[0034] (1) Standard RCA cleaning is performed on the silicon wafer, and after rinsing in hydrofluoric acid, aluminum paste is screen-printed on the back of the silicon wafer. The silicon wafer brushed with aluminum paste was placed in a rapid heat treatment furnace for sintering, the sintering temperature was 700°C, the time was 50s, and the atmosphere was argon. After si...

Embodiment 2

[0041] In this embodiment, the erbium silicate with sensitization effect prepared on the porous silicon is still a p-type Czochralski silicon wafer with a (100) crystal orientation, and the silicon wafer is polished on one side, and the resistivity ρ=0.001~0.01Ω.cm The erbium soluble compound used is obtained by dissolving erbium chloride hexahydrate in alcohol. The heat treatment conditions are that the first section is first heated to 900 ° C and kept for 4 minutes, and the atmosphere is O 2 ; The second section continues to heat up to 1200 ° C and keep it warm for 3 minutes, the atmosphere is Ar.

[0042] Concrete preparation method is as follows (similar to embodiment 1):

[0043] (1) Standard RCA cleaning is performed on the silicon wafer, and after rinsing in hydrofluoric acid, aluminum paste is screen-printed on the back of the silicon wafer. Put the silicon wafer brushed with aluminum paste in a rapid heat treatment furnace for sintering, the sintering temperature is ...

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Abstract

The invention discloses a preparation method of erbium silicate with the sensitization effect. The preparation method comprises steps as follows: porous silicon is rotationally coated with a solution obtained by dissolving an erbium soluble compound in a solvent until the rotational coating quantity reaches (4.44*10<-3>)-(8.89*10<-2>)ml/cm <2>, and after drying, erbium silicate with the sensitization effect is obtained through two steps of heat treatment sequentially. The prepared erbium silicate adopts a core-shell structure comprising a nano-silicon pillar and single-layer erbium silicate covering the surface of the nano-silicon pillar, has the better sensitization effect, can illuminate better under the off-resonance exciting light, and can be applied to the fields of silica-based photoelectricity integration, photo-communication and the like.

Description

technical field [0001] The invention relates to the field of silicon-based optoelectronics, in particular to an erbium silicate with a sensitization effect and a preparation method and application thereof. Background technique [0002] Porous silicon is a new type of nano-semiconductor optoelectronic material. It has good photoluminescence and electroluminescence properties at room temperature, and is easily compatible with existing silicon technologies. It is very likely to be applied in many fields such as silicon-based optoelectronics. The luminescence of the rare earth ion erbium (Er) has the advantages of good temperature stability, sharp emission lines, and little dependence on the host material, especially its 1.54 μm luminescence just corresponds to the minimum absorption wavelength of the communication optical fiber, so it is used in modern It occupies a pivotal position in optical communication technology. [0003] In recent years, the luminescence of erbium-doped...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/20C09K11/79
Inventor 李东升沈浩徐凌波杨德仁
Owner ZHEJIANG UNIV
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