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Method for preparing and transferring multilayer barium titanate and multilayer cobalt ferrite magnetoelectric composite film

A magnetoelectric composite and barium titanate technology, which is applied in the field of microelectronics, can solve problems such as leakage and influence on magnetoelectric coupling, and achieve the effect of preventing cracking

Active Publication Date: 2015-06-10
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the clamping of the substrate, the magnetoelectric coupling is seriously affected
In 2004, H. Zheng et al. successfully prepared a barium titanate-cobalt ferrite nanocomposite material with a 1-3 structure. The material said to increase the magnetoelectric coefficient and reduce the substrate clamping effect, but there is a problem of leakage. defect

Method used

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  • Method for preparing and transferring multilayer barium titanate and multilayer cobalt ferrite magnetoelectric composite film
  • Method for preparing and transferring multilayer barium titanate and multilayer cobalt ferrite magnetoelectric composite film
  • Method for preparing and transferring multilayer barium titanate and multilayer cobalt ferrite magnetoelectric composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Example 1: A four-layer self-supporting magnetoelectric composite film with a thickness of 60 nm was prepared.

[0061] refer to figure 2 , the implementation steps of this example are as follows

[0062] Step 1, growing a magnesium oxide film on a C-plane sapphire substrate.

[0063] 1.1) Put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, then feed oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 5*10 -3 mbar;

[0064] 1.2) Turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 3Hz, the temperature of the substrate is set at 600°C, and the magnesium oxide target is burned 10,000 times by the laser beam to generate magnesium oxide plasma, which moves to the C-plane sapphir...

Embodiment 2

[0082] Example 2: Preparation of a four-layer self-supporting magnetoelectric composite film with a thickness of 90 nm.

[0083] refer to figure 2 , the implementation steps of this example are as follows

[0084] Step 1, growing a magnesium oxide film on a C-plane sapphire substrate.

[0085] 1a) Put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, then feed oxygen into the reaction chamber to keep the oxygen pressure in the reaction chamber at 0.01mbar;

[0086] 1b) Turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 4Hz, the temperature of the substrate is set to 650°C, and the magnesium oxide target is burned 13,000 times by the laser beam to generate magnesium oxide plasma, which moves to the C-plane sapphire substra...

Embodiment 3

[0104] Example 3: Preparation of a six-layer self-supporting magnetoelectric composite film with a thickness of 180 nm.

[0105] refer to image 3 , the implementation steps of this example are as follows

[0106] In the first step, a magnesium oxide film is grown on a C-plane sapphire substrate.

[0107] First, put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, then feed oxygen into the reaction chamber to keep the oxygen pressure in the reaction chamber at 0.1mbar;

[0108] Then, turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 5Hz, the temperature of the substrate is set to 700°C, and the magnesium oxide target is burned 15,000 times by the laser beam to generate magnesium oxide plasma, which moves to the C-plane s...

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Abstract

The invention discloses a method for preparing and transferring a multilayer barium titanate and multilayer cobalt ferrite magnetoelectric composite film. The problems that the substrate clamping effect and electric leakage cannot be simultaneously reduced by the composite material of the conventional structures 1-3 are mainly solved. The method comprises the following implementation steps: depositing a magnesium oxide film on a sapphire substrate, and alternatively depositing a multilayer cobalt ferrite film and a multilayer barium titanate film on the substrate; spinning polymethyl methacrylate on the surface of the final barium titanate film, and removing a single crystal magnesium oxide film by using an ammonium sulfate solution, so that the magnetoelectric composite film attached to polymethyl methacrylate is separated from the sapphire substrate; and transferring the magnetoelectric composite film separated from the sapphire substrate onto a subsequent needed substrate, thereby obtaining a self-supported magnetoelectric film compounded by the multilayer cobalt ferrite film and the multilayer barium titanate film. The multilayer barium titanate and multilayer cobalt ferrite composite film disclosed by the invention is large in surface coupling property, the magnetic and electrical properties are enhanced, the substrate clamping and electric leakage problems are reduced, and the method can be used for preparing a magnetoelectric sensor.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method for preparing and transferring a magnetoelectric composite thin film, which can be used in the preparation of a magnetoelectric sensor. Background technique [0002] Magnetoelectric materials are a class of multiferroic materials, which refer to materials that have both ferroelectricity and ferromagnetism within a certain temperature range. Due to the ferroelectric-ferromagnetic cross-coupling effect in magnetoelectric materials, it is possible to change the magnetization by electric field and the electric polarization by magnetic field. However, single-phase ferromagnetic multifunctional materials have the disadvantages of too low Curie temperature and too weak magnetoelectric coupling coefficient, which lead to a far distance from practical use, and magnetoelectric composite materials have appeared for this reason. Different from single-phase magnetoelectric ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/52H10N50/01
Inventor 陆小力张吉文张春福张进成郝跃
Owner XIDIAN UNIV
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