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Planar perovskite solar cell based on graphene ZnO cathode and preparation method thereof

A technology of solar cells and graphene, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of not being suitable for preparing large-area thin films, being incompatible with flexible substrates, and high cost, so as to improve energy conversion efficiency and environmental protection Quality, low cost effect

Inactive Publication Date: 2015-05-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ZnO thin films can be prepared by a variety of methods, such as radio frequency magnetron sputtering, atomic layer deposition, pulsed laser deposition, chemical vapor deposition and sol-gel method, etc., but most of these processes are expensive and require more than 200 ° C High temperature, so it is not suitable for the preparation of large-area thin films, and it is not compatible with flexible substrates

Method used

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  • Planar perovskite solar cell based on graphene ZnO cathode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Example 1: Fabrication of a solar cell with a thickness of 70 nm of ZnO electron transport layer.

[0031] Step 1, cleaning the substrate substrate.

[0032] The graphene glass substrate with a thickness of 20 nm was sequentially placed in deionized water, acetone, absolute ethanol and deionized water for ultrasonic cleaning for 5 minutes, and dried with a nitrogen gun after cleaning.

[0033] Step 2, deposit a ZnO electron transport layer.

[0034] 2a) Configure ZnO precursor solution: Dissolve 150mg of ZnO powder with particle size less than 5um in 15ml ammonia with a concentration of 25%, and put it in the refrigerator after 5min ultrasonic vibration, at a refrigeration temperature of 5℃, and a refrigeration time of 24h to obtain ZnO precursor solution with a concentration of 0.125M / L;

[0035] 2b) Spin-coating the ZnO precursor solution on the graphene at a spin-coating speed of 4000r / min, a spin-coating time of 40s, and annealing in an oven at a temperature of 100°C for 5mi...

Embodiment 2

[0047] Example 2: Fabrication of a solar cell with a thickness of 70 nm of the ZnO electron transport layer.

[0048] Step one, clean the substrate substrate

[0049] The graphene glass substrate covered with a thickness of 25nm was sequentially placed in deionized water, acetone, absolute ethanol and deionized water for ultrasonic cleaning for 10 minutes, and then dried with a nitrogen gun after cleaning.

[0050] Step two, deposit a ZnO electron transport layer.

[0051] 2. A) The specific implementation of this step is the same as step 2a) of embodiment 1;

[0052] 2. Two) Spin-coating the ZnO precursor solution on the graphene with a spin-coating speed of 3000 r / min and a spin-coating time of 40 s, and annealing in an oven at a temperature of 150° C. for 10 minutes, the obtained ZnO thickness is 85 nm. Step three, spin-coating PbI 2 Solution.

[0053] First, 460mg of PbI 2 Dissolve in 1ml of dimethylacetamide DMF and stir at 90℃ for 6h to obtain 460 / mL clear PbI 2 Solution

[0054] T...

Embodiment 3

[0064] Example 3: Manufacturing a solar cell with a thickness of 100 nm of the ZnO electron transport layer.

[0065] Step A, cleaning the substrate substrate.

[0066] The graphene glass substrate covered with a thickness of 40 nm was sequentially placed in deionized water, acetone, absolute ethanol and deionized water for ultrasonic cleaning for 15 minutes, and dried with a nitrogen gun after cleaning.

[0067] Step B, deposit a ZnO electron transport layer.

[0068] B1) The specific implementation of this step is the same as step 2a) of embodiment 1;

[0069] B2) Spin-coating the ZnO precursor solution on the graphene at a spin-coating speed of 2000r / min and a spin-coating time of 40s, and annealed in an oven at a temperature of 200°C for 10 minutes, to obtain a ZnO thickness of 100nm.

[0070] Step C, spin coating PbI 2 Solution.

[0071] 460mg of PbI 2 Dissolve in 1ml of dimethylacetamide DMF and stir at 90℃ for 6h to obtain 460 / mL clear PbI 2 Solution; then spin-coated PbI on the su...

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Abstract

The invention discloses a planar perovskite solar cell based on graphene ZnO cathode and a preparation method thereof, which are used for solving the problems that an existing perovskite solar cell is high in transparent electrode cost, unmatched in energy level and poor in interface characteristic. The planar perovskite solar cell comprises a substrate (1), a cathode (2), an electron transfer layer (3), an optical active layer (4), a cavity transmission layer (5) and an anode (6) from bottom to top, wherein the cathode (2) is made of graphene and used for collecting electrons; the electron transfer layer is made of ZnO and used for modifying an interface, blocking a cavity and transferring electrons. The graphene is adopted as the cathode, the ZnO electron transfer layer is prepared by spinning a precursor solution, so that the work function of the graphene function is reduced, the energy level matching between the graphene and the CH3NH3PbI3 is realized, the interface characteristic is improved, and the performances of the planar perovskite solar cell are effectively improved.

Description

Technical field [0001] The invention belongs to the technical field of microelectronic devices, and particularly relates to solar cells, in particular to a perovskite solar cell and a preparation method thereof, which can be used for photoelectric conversion. Background technique [0002] In today's society, the rapid economic development has brought about serious problems such as energy crisis and global warming. The development and utilization of renewable clean energy has received widespread attention from all over the world. Different from traditional energy sources such as coal, oil, and natural gas, solar energy is a green, clean, and renewable energy source that is inexhaustible and has the potential to become an important part of future energy supply. As a photoelectric conversion device, the research and application of solar cells have received more and more attention. Compared with costly silicon-based solar cells, perovskite solar cells use perovskite semiconductor ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/60H10K30/00H10K30/81H10K2102/00Y02E10/549
Inventor 张春福唐诗张进成陈大正郝跃习鹤罗莉
Owner XIDIAN UNIV
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