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Method for preparing molybdenum disulfide thin film

A technology of molybdenum disulfide and thin film, which is applied in the field of preparing molybdenum disulfide thin film, to achieve the effect of controllable thickness, simple operation and good repeatability

Inactive Publication Date: 2015-04-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are still great challenges in the controllable preparation of large-area, high-quality MoS2 thin films.

Method used

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  • Method for preparing molybdenum disulfide thin film
  • Method for preparing molybdenum disulfide thin film
  • Method for preparing molybdenum disulfide thin film

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Experimental program
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Embodiment 1

[0028] A method for the preparation of molybdenum disulfide thin films, using molybdenum metal particles and sulfur powder as raw materials to prepare MoS on target substrates by dual-source evaporation in a vacuum environment 2 Thin film, by adjusting the electron beam size of molybdenum metal evaporation, the temperature of sulfur powder evaporation and the growth time, the content ratio of Mo atoms and S atoms is 1:2, Mo atoms and S atoms react on the heated substrate to form MoS 2 Molecules, Molybdenum Disulfide film with controllable layer number was obtained.

Embodiment 2

[0030] A method for preparing a molybdenum disulfide thin film, comprising the following steps:

[0031] 1) Install the cleaned SiO2 at the sample position in the cavity of the electron beam evaporation and resistance evaporation multi-source evaporation coating machine 2 / Si substrate, and then put molybdenum metal particles and sulfur powder in the electron beam evaporation crucible and resistance evaporation crucible respectively;

[0032] 2) Pump the cavity to a background vacuum of 1×10 -3 Below Pa, raise the substrate temperature to 300°C;

[0033] 3) The molybdenum metal evaporation electron beam current is 30mA, the sulfur powder evaporation temperature is 100°C, and the two are pre-evaporated for 2 minutes;

[0034] 4) Open the baffle to start growing, and the growth time is 1 min;

[0035] 5) After the growth is finished, cool down to room temperature naturally to prepare a monomolecular layer molybdenum disulfide thin film.

[0036] The Raman spectrum of the mol...

Embodiment 3

[0038] A method for preparing a molybdenum disulfide thin film, comprising the following steps:

[0039] 1) Install the cleaned monocrystalline silicon substrate at the sample position in the cavity of the electron beam evaporation and resistance evaporation multi-source evaporation coating machine, and then put molybdenum metal particles and sulfur powder into the electron beam evaporation crucible and the resistance evaporation crucible respectively;

[0040] 2) Pump the cavity to a background vacuum of 1×10 -3 Below Pa, raise the substrate temperature to 400°C;

[0041] 3) The molybdenum metal evaporation electron beam current is 40mA, the sulfur powder evaporation temperature is 110°C, and the two are pre-evaporated for 2 minutes;

[0042] 4) Open the baffle to start growing, and the growth time is 2 minutes;

[0043] 5) After the growth is completed, cool down to room temperature naturally to prepare a bimolecular layer molybdenum disulfide thin film.

[0044] image ...

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Abstract

The invention provides a method for preparing a molybdenum disulfide thin film. The method comprises the following steps: by taking molybdenum metal particles and sulfur powder as raw materials, preparing a MoS2 thin film on a target substrate in a vacuum environment by virtue of a double source evaporation method; adjusting the evaporation rates of the molybdenum and sulfur sources, wherein the content ratio of Mo atoms and S atoms is 1: 2; and carrying out reaction on the Mo atoms and S atoms on a heated substrate to generate MoS2 molecules to obtain the layer-controlled molybdenum disulfide thin film. The method achieves controllable layers of the molybdenum disulfide thin film by controlling an electron beam, heat evaporating temperature and growing time. The method provided by the invention is simple to operate and the molybdenum disulfide thin film is controllable in thickness, so that large-area high-purity molybdenum disulfide thin films with a monomolecular layer, double molecular layers and multiple molecular layers can be prepared. The method has the characteristics of low reaction temperature, energy conservation, high efficiency, simple operation, good controllability, good repeatability and batch preparation and the invention provides a reliable sample preparation method for application of molybdenum disulfide in electric and optical fields.

Description

technical field [0001] The invention belongs to the field of preparation of novel two-dimensional nanometer materials, in particular to a method for preparing a molybdenum disulfide thin film. Background technique [0002] Since its discovery, two-dimensional materials have rapidly become an international frontier and hotspot in related fields such as materials and physics. As a typical representative of two-dimensional materials, graphene has aroused a research boom in the scientific field due to its excellent physical properties and high mobility. Then, since graphene belongs to a kind of semi-metallic material, and its gap is zero, the switching ratio based on graphene field effect crystal is extremely low. Although there are many studies on opening the gaps in graphene, so far, the research results obtained are not significant, which limits its application in large-scale integrated transistors and logic circuits. [0003] In recent years, people have turned their atten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24
CPCC23C14/0021C23C14/0623
Inventor 陈远富戚飞刘兴钊李萍剑郑斌杰张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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