On-chip integrated beam combining laser based on photonic crystal y-waveguide and manufacturing method thereof

A photonic crystal and two-dimensional photonic crystal technology, which is applied to the structure of optical waveguide light guide and optical waveguide semiconductor, can solve the problem that the semiconductor laser unit device cannot balance high output power and high beam quality well, and avoid the interface Loss, cost and difficulty reduction, compactness effect

Active Publication Date: 2017-07-14
吉光半导体科技有限公司
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Problems solved by technology

[0004] In order to solve the shortcomings of semiconductor laser unit devices that can not take into account high output power and high beam quality, the present invention proposes an on-chip integrated beam combining laser based on photonic crystal Y waveguide and its manufacturing method to provide high power and high beam quality the laser

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  • On-chip integrated beam combining laser based on photonic crystal y-waveguide and manufacturing method thereof
  • On-chip integrated beam combining laser based on photonic crystal y-waveguide and manufacturing method thereof
  • On-chip integrated beam combining laser based on photonic crystal y-waveguide and manufacturing method thereof

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Embodiment

[0049] A method for manufacturing an on-chip integrated beam combining laser based on a photonic crystal Y-waveguide, comprising the steps of:

[0050] Step 1, select a GaAs substrate 102; grow a 300nm n-type GaAs buffer layer 103 and a 1500nm Al0.6Ga0.4As n-type cladding layer 104 sequentially on the n-type GaAs substrate 102 by metal-organic chemical vapor deposition , 150nm Al0.3Ga0.7As lower waveguide layer 105, 10nm InGaAlAs single quantum well 106, 150nm Al0.3Ga0.7As upper waveguide layer 107, 1500nm Al0.6Ga0.4As p-type cladding layer 108 and 200nm p-type heavy Doping the capping layer 109, the excitation wavelength of the obtained epitaxial wafer is 808nm;

[0051]Step 2, cleaning the epitaxial wafer with acetone, ethanol, isopropanol;

[0052] Step 3, coating photoresist on the washed epitaxial wafer, then exposing and developing;

[0053] Step 4, using the method of inductively coupled ion etching, etch the p-type cladding layer 109 down to the p-type cladding layer...

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Abstract

On-chip integrated beam-combining laser based on photonic crystal Y-waveguide and its manufacturing method belong to the field of optoelectronic semiconductor technology. On the bottom, an n-type buffer layer, an n-type cladding layer, a lower waveguide layer, a quantum well, an upper waveguide layer, a p-type cladding layer, and a p-type capping layer are sequentially grown by metal-organic chemical vapor deposition, and it also includes three lasers. Three lasers are connected to a rectangular waveguide, in which two parallel lasers with a certain distance are connected to the left side of the rectangular waveguide, and the other laser is connected to the right side of the rectangular waveguide; a rectangular waveguide is connected to the three lasers ; The three lasers and the rectangular waveguide are formed on the p-type cover layer by etching down to the p-type cladding layer; a Y-waveguide two-dimensional photonic crystal, the photonic crystal is located on the rectangular waveguide.

Description

technical field [0001] The invention relates to an on-chip integrated beam combining laser based on a photonic crystal Y waveguide and a manufacturing method thereof, belonging to the technical field of optoelectronic semiconductors. Background technique [0002] Semiconductor lasers are widely used in many fields such as industry, military, medical treatment, and communications. Their main applications include material processing, laser printing, reading and writing of optical storage, laser ranging, pumping solid-state lasers, optical communications, and optical storage. Interconnection, etc., but low power limits the further application of semiconductor lasers. The output power can be increased by combining beams, and the beam quality can be improved by collimating the fast and slow axes, which provides possibilities for more and wider applications. However, beam combining requires a large number of optical elements, which not only increases the cost but also increases t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20G02B6/13
Inventor 佟存柱王涛汪丽杰田思聪邢恩博戎佳敏卢泽丰王立军
Owner 吉光半导体科技有限公司
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