Polishing solution for chemically mechanically polishing germanium crystal and application method
A crystal chemical and mechanical polishing technology, applied in the field of CMP polishing liquid, can solve the problems of inability to guarantee processing quality, waste of raw materials, and high cost of germanium materials, and achieve the effect of being conducive to removing, reducing damage layers, and low-damage polishing
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Embodiment 1
[0024] Prepare 3000g germanium single crystal coarse polishing liquid and 500g fine polishing liquid and perform two-step polishing
[0025] Take 1500g abrasive particle size 15-20 nanometer SiO 2 Sol, add 1235g deionized water while stirring, then add 30g of FA / O Type I surfactant respectively while stirring, 45gFA / O Type II chelating agent, 60g concentration of 20% Tetrahydroxyethylethylenediamine solution, 30g Oxidant hydrogen peroxide, stir evenly to prepare a coarse throwing liquid; then take 2.5g of FA / O I-type surfactant, stir and add it to 497.5g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 300g / min flow rate, pressure 27.58KPa, temperature 35°C, speed 60 / 65rpm, rough polishing 10min and then fine polishing, flow rate 500g / min, pressure 13.79KPa, temperature 25°C Rotate at 90 / 95rpm, polish for 1min. The final polishing rate was 1.04 μm / min, and the surface roughness was 14.7 nm.
Embodiment 2
[0027] Prepare 2000g germanium single crystal coarse polishing liquid and 400g fine polishing liquid and perform two-step polishing
[0028] Take 500g abrasive particle size 60-70 nanometer SiO 2 Sol, add 1430g deionized water while stirring, add 10g FA / O type I surfactant respectively while stirring, 20gFA / O type II chelating agent, 20g concentration of 20% tetrahydroxyethylenediamine solution, 20g oxidant hydrogen peroxide , Stir evenly to prepare a coarse throwing liquid; finally take 1.2g of FA / O Type I surfactant and stir it and add it to 398.8g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, the rough polishing process is 200g / min, the pressure is 13.79KPa, the temperature is 30°C, and the speed is 60 / 65rpm. After rough polishing for 10 minutes, fine polishing is carried out. The flow rate is 400g / min, the pressure is 6.895KPa, and the temperature is 25°C. Rotate at 80 / 85rpm, polish for 1min. The final polishing rate was 1.12 μm...
Embodiment 3
[0030] Prepare 1000g germanium single crystal coarse polishing liquid and 300g fine polishing liquid and perform two-step polishing
[0031] Take 100g abrasive particle size 100-110 nanometer SiO 2Sol, add 890g of deionized water while stirring, then add 1g of FA / O Type I surfactant, 2g of FA / O Type II chelating agent, 5g of 20% tetrahydroxyethylenediamine solution, 2g of oxidant hydrogen peroxide while stirring , Stir evenly to prepare a coarse throwing liquid; finally take 0.3g of FA / O Type I surfactant and stir it and add it to 399.7g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 100g / min flow rate, pressure 6.895KPa, temperature 25°C, speed 40 / 45rpm, rough polishing 10min and then fine polishing, flow rate 300g / min, pressure 0KPa, temperature 25°C speed 60 / 65rpm, polishing for 1min. The final polishing rate was 1.001 μm / min, and the surface roughness was 14.1 nm.
[0032] The FA / O Type I surfactant and t...
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