Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing solution for chemically mechanically polishing germanium crystal and application method

A crystal chemical and mechanical polishing technology, applied in the field of CMP polishing liquid, can solve the problems of inability to guarantee processing quality, waste of raw materials, and high cost of germanium materials, and achieve the effect of being conducive to removing, reducing damage layers, and low-damage polishing

Inactive Publication Date: 2015-03-25
HEBEI UNIV OF TECH
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of germanium materials is relatively high. If traditional grinding and polishing methods are used for processing, it will not only waste raw materials but also fail to guarantee the processing quality; the research and development and wide application of germanium materials are driving the demand for germanium polishing sheets to increase year by year. Although my country's germanium resource reserves rank first in the world, germanium materials still need to be imported from abroad at this stage, so research on chemical mechanical polishing technology for germanium single crystals has become a hot spot of concern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Prepare 3000g germanium single crystal coarse polishing liquid and 500g fine polishing liquid and perform two-step polishing

[0025] Take 1500g abrasive particle size 15-20 nanometer SiO 2 Sol, add 1235g deionized water while stirring, then add 30g of FA / O Type I surfactant respectively while stirring, 45gFA / O Type II chelating agent, 60g concentration of 20% Tetrahydroxyethylethylenediamine solution, 30g Oxidant hydrogen peroxide, stir evenly to prepare a coarse throwing liquid; then take 2.5g of FA / O I-type surfactant, stir and add it to 497.5g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 300g / min flow rate, pressure 27.58KPa, temperature 35°C, speed 60 / 65rpm, rough polishing 10min and then fine polishing, flow rate 500g / min, pressure 13.79KPa, temperature 25°C Rotate at 90 / 95rpm, polish for 1min. The final polishing rate was 1.04 μm / min, and the surface roughness was 14.7 nm.

Embodiment 2

[0027] Prepare 2000g germanium single crystal coarse polishing liquid and 400g fine polishing liquid and perform two-step polishing

[0028] Take 500g abrasive particle size 60-70 nanometer SiO 2 Sol, add 1430g deionized water while stirring, add 10g FA / O type I surfactant respectively while stirring, 20gFA / O type II chelating agent, 20g concentration of 20% tetrahydroxyethylenediamine solution, 20g oxidant hydrogen peroxide , Stir evenly to prepare a coarse throwing liquid; finally take 1.2g of FA / O Type I surfactant and stir it and add it to 398.8g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, the rough polishing process is 200g / min, the pressure is 13.79KPa, the temperature is 30°C, and the speed is 60 / 65rpm. After rough polishing for 10 minutes, fine polishing is carried out. The flow rate is 400g / min, the pressure is 6.895KPa, and the temperature is 25°C. Rotate at 80 / 85rpm, polish for 1min. The final polishing rate was 1.12 μm...

Embodiment 3

[0030] Prepare 1000g germanium single crystal coarse polishing liquid and 300g fine polishing liquid and perform two-step polishing

[0031] Take 100g abrasive particle size 100-110 nanometer SiO 2Sol, add 890g of deionized water while stirring, then add 1g of FA / O Type I surfactant, 2g of FA / O Type II chelating agent, 5g of 20% tetrahydroxyethylenediamine solution, 2g of oxidant hydrogen peroxide while stirring , Stir evenly to prepare a coarse throwing liquid; finally take 0.3g of FA / O Type I surfactant and stir it and add it to 399.7g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 100g / min flow rate, pressure 6.895KPa, temperature 25°C, speed 40 / 45rpm, rough polishing 10min and then fine polishing, flow rate 300g / min, pressure 0KPa, temperature 25°C speed 60 / 65rpm, polishing for 1min. The final polishing rate was 1.001 μm / min, and the surface roughness was 14.1 nm.

[0032] The FA / O Type I surfactant and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a polishing solution for chemically mechanically polishing germanium crystal and an application method. The polishing solution comprises a rough polishing solution and a fine polishing solution, wherein the rough polishing solution is mainly prepared from the following raw materials in percentage by weight: 10 to 50% of hydrosol grinding material, 0.2 to 1.5% of an oxidant, 0.5 to 2% of a pH conditioner, 0.2 to 1.5% of a chelating agent, and 0.1 to 1% of a surface active agent, wherein the hydrosol grinding material is 15 to 110nm in particle size and has the concentration being not less than 40wt% (percentage by weight) and hardness being not greater than 7 Mohs; the fine polishing solution is mainly prepared from 0.1 to 0.5% of a surface active agent, and the balance of deionized water. The two-step polishing method is performed for chemical mechanical polishing and comprises two steps of selecting the rough polishing solution and then second the fine polishing solution; the two polishing can be performed through one polishing machine. The polishing solution has the beneficial effect that the problems of low rate, high roughness and pollution of metal ions and particles in chemical mechanical polishing of germanium crystal materials can be solved.

Description

technical field [0001] The invention belongs to a CMP polishing liquid, in particular to a polishing liquid for germanium crystal chemical mechanical polishing and a use method. Background technique [0002] Germanium (Ge) is not only a rare metal, but also an extremely important semiconductor material. Germanium has a relative atomic mass of 72.59 and a density of 5.35g / cm 3 ; The melting point and boiling point of germanium are higher, respectively 937.4 ℃ and 2830 ℃. The surface of germanium is silver-gray, and the lattice is diamond-type. [0003] Germanium plays an irreplaceable role in the guarantee of national security and the construction of the national economy. It is considered a very important strategic resource. At present, it has become a new type of clean energy material. Germanium single crystals have been widely and successfully used in the field of solar cells. Solar cells can convert light energy into electrical energy, which is of great significance t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/306
CPCC09G1/02H01L21/306
Inventor 牛新环檀柏梅王如孙鸣王胜利
Owner HEBEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products