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Preparation method for carbon nanotube heterostructure

A technology of heterostructure and carbon nanotubes, applied in the field of preparation of carbon nanotube heterostructures, can solve the problems of complex carbon nanotube process, unstable chemical and physical properties, high cost, etc., and achieves strong electrical properties and low cost. , the effect of the simple method

Inactive Publication Date: 2015-03-11
CHONGQING XUXING CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the preparation process of carbon nanotubes is relatively complicated, the cost is high, and the chemical and physical properties are unstable, which has become the main factor limiting the application of carbon nanotubes.

Method used

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Examples

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Effect test

preparation example Construction

[0025] A method for preparing a carbon nanotube heterostructure, comprising the steps of:

[0026] The Si sample is used as the anode, and the platinum is used as the cathode, and electrolyzed in an electrolyte mixed with deionized water, absolute ethanol and hydrofluoric acid, so that conical holes are formed on the Si surface;

[0027] Synthesis of Fe by High Temperature Liquid Phase Method 3 o 4 Nanoparticle catalysts;

[0028] Dissolve iron acetylacetonate in oleic acid oil and diol, and pyrolyze it in a phenylene ether environment;

[0029] Fe will be prepared 3 o 4 The nanoparticle solution is dropped on the porous silicon surface and left to dry naturally in the air;

[0030] The prepared porous silicon sample was placed in a vacuum chamber, the background vacuum was pumped and H 2 , turn on the microwave source for pretreatment, and the substrate is heated up to the predetermined temperature by the heating system and plasma bombardment;

[0031] After pretreatme...

Embodiment 1

[0035] The Si sample is used as the anode, and the platinum is used as the cathode. Electrolyze for 10 minutes in an electrolyte mixed with 1L of deionized water, 1L of absolute ethanol and 1L of hydrofluoric acid to form conical pores with a pore size of several hundred nanometers to several microns on the Si surface; Fe will be prepared 3 o 4 The nanoparticle solution was dropped on the surface of porous silicon and left to dry naturally in the air; Fe was synthesized by high-temperature liquid phase method 3 o 4 Nanoparticle catalyst; dissolve iron acetylacetonate into oleic acid oil and diol, and pyrolyze it in a phenylene ether environment; place the prepared porous silicon sample in a vacuum chamber, pump the background vacuum to 1Pa, and inject 40sccm H 2 , turn on the microwave source, pretreatment for 5min, the substrate is heated up to 800°C by the heating system and plasma bombardment; after the pretreatment, CH 4 and B 2 h 6 gas, CH 4 :B 2 h 6 :H 2 The ra...

Embodiment 2

[0037] The Si sample is used as the anode, and the platinum is used as the cathode, and electrolyzed in the electrolyte mixed with 1L deionized water, 1.5L absolute ethanol and 1L hydrofluoric acid for 20min to form conical pores with a diameter of several hundred nanometers to several micrometers on the Si surface ; Fe will be prepared 3 o 4 The nanoparticle solution was dropped on the surface of porous silicon and left to dry naturally in the air; Fe was synthesized by high-temperature liquid phase method 3 o 4 Nanoparticle catalyst; dissolve iron acetylacetonate into oleic acid oil and diol, and pyrolyze it in a phenylene ether environment; place the prepared porous silicon sample in a vacuum chamber, pump the background vacuum to 2Pa, and inject 50sccm H 2 , turn on the microwave source, pretreatment for 10min, the substrate is heated up to 1000°C by the heating system and plasma bombardment; after the pretreatment, CH 4 and B 2 h 6 gas, CH 4 :B 2 h 6 :H 2 The ra...

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Abstract

The invention relates to a preparation method for a carbon nanotube heterostructure. The method comprises the steps of: taking an Si sample as the anode and platinum as the cathode, electrolyzing the anode and cathode in an electrolyte solution formed by mixing of deionized water, ethanol absolute and hydrofluoric acid to form taper holes on the Si surface; synthesizing an Fe3O4 nanoparticle catalyst by a high temperature liquid phase technique; dissolving ferric acetylacetonate into oleic acid grease and diol, and carrying out high-temperature pyrolysis in a phenyl ether environment; dripping the prepared Fe3O4 nanoparticle solution on the porous silicon surface, and performing natural drying in the air; placing the well prepared porous silicon sample in a vacuum chamber, conducting base vacuum pumping and introducing H2, opening a microwave source to perform pretreatment, raising the temperature of the substrate to a predetermined temperature through a heating system and plasma bombardment together; after pretreatment, introducing CH4 and B2H6 gas to prepare a boron doped carbon nanotube; stopping introducing B2H6, and increasing the CH4 flow to prepare the pure carbon nanotube. The method provided by the invention is simple and is low in cost. The obtained heterostructure has stable performance, and stronger optical and electrical properties.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for preparing a carbon nanotube heterostructure. Background technique [0002] Since Iijima discovered carbon nanotubes (CNTs) in 1991, they have become one of the research hotspots worldwide because of their unique mechanical, electrical and chemical properties. The electrical properties of carbon nanotubes are closely related to their structure and doping composition. If two nanotubes with different structures or different doping compositions are connected to each other, a metal-semiconductor, semiconductor-semiconductor or metal-metal nanoheterogeneity can be formed. structure. If the synthesis of this heterostructure can be effectively controlled, nano-semiconductor devices such as PN junctions and Schottky barriers can be formed, and then large-scale integrated circuits can be formed, which has broad application prospects in the electronic field. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02
Inventor 周祖渝
Owner CHONGQING XUXING CHEM
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