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A method for rapidly preparing large-scale single-crystal graphene

A liquid copper and substrate technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of metal tungsten substrate bending, uneven spreading of liquid copper, unfavorable graphene preparation, etc., to achieve nucleation Recyclable, not easy to deform and bend, fast growth effect

Active Publication Date: 2017-02-08
INST OF CHEM CHINESE ACAD OF SCI
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Problems solved by technology

[0004] However, the preparation of liquid copper substrate directly on the metal tungsten substrate has the problem of uneven spreading of liquid copper, and the metal tungsten substrate is easy to bend, which is not conducive to the subsequent graphene preparation; moreover, in the chemical vapor deposition method, the influence of graphene formation factors need further study

Method used

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  • A method for rapidly preparing large-scale single-crystal graphene
  • A method for rapidly preparing large-scale single-crystal graphene
  • A method for rapidly preparing large-scale single-crystal graphene

Examples

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Embodiment 1

[0042] Embodiment 1, preparation centimeter size single crystal graphene

[0043] 1) Preparation of reaction substrate:

[0044] Polish the copper-tungsten alloy sheet with sandpaper to remove the oxide layer on the surface, ultrasonically clean it with deionized water, and dry it with nitrogen gas for later use (such as figure 1 shown). Cut the copper foil to the approximate size of the copper-tungsten alloy, ultrasonically clean it with hydrochloric acid and deionized water in sequence, and dry it with nitrogen, then stack the copper foil on the copper-tungsten alloy.

[0045] 2) Put the above-mentioned stacked copper foil and copper-tungsten alloy into the center of the quartz tube of the tubular heating furnace, turn on the vacuum pump connected to the quartz tube, pump the system to an approximate vacuum state below 10Pa, turn off the vacuum pump and feed 200 sccm Hydrogen until the pressure in the system reaches atmospheric pressure, continue to maintain the flow of hydr...

Embodiment 2

[0051] Example 2, preparation of sub-centimeter size single crystal graphene

[0052] According to the same method as in Example 1, only the hydrogen flow is set to 8.5 sccm in step 3), and the methane flow is set to 4.8 sccm; the methane flow is set to 1.4 sccm in step 4); the reaction time is set in step 5) It takes 6 hours and 45 minutes to obtain subcentimeter-scale single-crystal graphene, and the size of a single graphene is about 0.6 cm. The graphene is annealed in the air, the morphology of the graphene can be seen visually, and a photo is taken with a camera, such as Figure 8 shown.

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Abstract

The invention relates to a method for quickly preparing large-size single-crystal graphene on a liquid copper substrate by a chemical vapor deposition process. The method comprises the following steps: in a hydrogen and inert gas atmosphere, introducing vapor and a carbon source, growing large-size single-crystal graphene by using catalytic cracking of the carbon source on the liquid copper substrate surface, and cooling to room temperature in an inert gas atmosphere to obtain the large-size single-crystal graphene. Compared with the traditional solid metal substrate, the liquid copper substrate used in the method has the advantages of high growth speed, uniform nucleation and the like and can be recycled in the aspect of graphene preparation. The carbon source and water content are regulated to implement the controllable graphene size, thereby obtaining the centimeter-sized single-crystal graphene. The prepared graphene is applicable to preparing field-effect transistor devices.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, and in particular relates to a method for rapidly preparing large-size single-crystal graphene. Background technique [0002] Graphene is a two-dimensional atomic crystal composed of carbon atoms arranged in a hexagonal honeycomb structure. Since it was successfully peeled off in 2004, it has become a research hotspot because of its ultra-high carrier mobility and unique quantum Hall effect. How to controlly prepare large-area, high-quality graphene is a prerequisite for its application in the semiconductor industry and the development and application of these excellent properties. At present, the main methods for preparing graphene are: mechanical exfoliation method, SiC pyrolysis method, graphite oxide reduction method, organic synthesis method and chemical vapor deposition method. Chemical vapor deposition has the advantages of simple operation, low cost, easy large-sc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/18C30B25/14H01L29/78
Inventor 武斌陈集思王立锋于贵刘云圻
Owner INST OF CHEM CHINESE ACAD OF SCI
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