A floating gate flash memory device and programming method thereof

Abstract

The invention provides a floating gate flash memory device and a programming method. The floating gate flash memory device includes a substrate in a cylindrical structure, and the two ends of the substrate are respectively a source end and a drain end; the gate is coated on the substrate In the middle part, a gate oxide layer is provided between the gate and the substrate, and the gate includes a parallel control gate and a floating gate. The programming method of the floating gate flash memory device provided by the present invention assists the movement of hot electrons by applying a bias voltage, provides enough energy to cross the gate oxide layer to complete the compilation, improves the compilation efficiency of the flash memory, and reduces the compilation current power consumption; in addition, the present invention The invention can also effectively shorten the key size of the floating gate flash memory with column gate and increase the cell density of the flash memory array, that is, increase the storage capacity and density of the flash memory.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits and its manufacture, in particular to a floating gate flash memory device and a programming method thereof. Background technique [0002] In semiconductor storage devices, flash memory is a non-volatile memory, and belongs to erasable programmable read-only memory (EPROM). Generally, a flash memory has two gates (a floating gate and a control gate), wherein the floating gate is used to store charges, and the control gate is used to control data input and output. The position of the floating gate is below the control gate, and it is in a floating state because it is not connected to the external circuit. The advantage of flash memory is that it can erase the entire memory block, and the erasing speed is fast, only about 1 to 2 seconds. Generally speaking, flash memory has a split gate structure or a stacked gate structure or a combination of the two structures. Due to its special...

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Problems solved by technology

[0005] However, the flash memory device disclosed in the above-mentioned patent has the following problems: in order to ensure high channel hot electron generation rate and high hot electron injection efficiency, a high voltage is applied to the drain and gate, and electrons flow from the source to the drain and Hot electrons are accelerated under the action of a high electric field near the drain, and part of the hot electrons pass through the oxide layer under the floating gate and enter the floating gate to complete the programming operation

Since the lateral electric field decreases with the increase of the gate voltage, and the vertical electric field increases with the increase of the gate voltage, a high voltage must be applied to both the drain and the gate, which brings about a decrease in the channel hot electron injection efficiency. The problem of low power consumption and high current consumption

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