Research method on microstructure evolution in SiO2 thin film growth process

Abstract

The invention belongs to the field of reverse research on the performance evolution in a thin film growth process, and particularly relates to a research method on microstructure evolution in an SiO2 thin film growth process. The research method can be used for evaluating an evolution rule of a microstructure in the SiO2 thin film growth process. According to the research method, layered corrosion is performed on an SiO2 thin film by adopting a chemical solution corrosion method, so that infrared dielectric constant testing is performed on the corroded SiO2 thin film respectively, and a short-range ordered structure of the SiO2 thin films with different thicknesses can be evaluated; the research method has an important significance on deep understanding of the microstructure in the thin film growth process; a reverse research method is provided for the research on the performance evolution rule of the growth process of a thin film material. According to the method, the defects of long period, high cost and the like of a conventional layered preparation method are overcome, and a novel method is provided for the reverse research on the growth process of the thin film.

Description

technical field [0001] The invention belongs to the field of reverse research on the performance evolution of the film growth process, and specifically relates to a SiO 2 A method for the study of microstructural evolution during film growth, which can be used to evaluate SiO 2 Microstructural evolution rules during film growth. Background technique [0002] SiO 2 Thin film is one of the important low-refractive index materials for optical thin films, and is widely used in the near-ultraviolet to near-infrared band. SiO 2 Thin film preparation methods include electron beam evaporation, ion assist, ion beam sputtering, magnetron sputtering, sol-gel, atomic layer deposition, etc. The characteristics of different film forming methods are quite different, especially their microstructural characteristics. It has a strong correlation with the light, heat and force of the film, so for SiO 2 The structural evaluation of thin films is of great significance. [0003] Evaluation ...

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Problems solved by technology

[0004] In summary, how to evaluate SiO 2 The performance evolution law of the film during the growth process, using the traditional layered plating evaluation method has the disadvantages of cost and long research cycle, so how to provide a fast and efficient SiO 2 It has become necessary to evaluate the short-range ordered microstructure changes of thin films during the growth process.

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