Nanometer silicon film cathode and manufacturing method thereof

A nano-silicon thin film and a manufacturing method technology are applied in cold cathode manufacturing, discharge tube cold cathode, electrode system manufacturing and other directions, which can solve the problem of poor electron emission stability of porous silicon cathode, unstable mechanical and chemical properties, and unfavorable long-term use. devices, etc., to achieve the effects of good electron emission stability, favorable electron acceleration, and high electron emission density

Inactive Publication Date: 2015-02-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] (1) The electron emission stability of the porous silicon cathode is poor, and the mechanical and chemical properties are unstable, which is not conducive to the preparation of devices for long-term use
[0005] (2) The electrochemical anode etching technology uses hydrofluoric acid as the corrosion solution, which will produce toxic waste water and seriously pollute the environment, so it has great limitations

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  • Nanometer silicon film cathode and manufacturing method thereof
  • Nanometer silicon film cathode and manufacturing method thereof
  • Nanometer silicon film cathode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] refer to figure 1 As shown, the nano-silicon thin film cathode has a multi-layer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode that are sequentially arranged on a substrate 4 3.

[0066] The fabrication method of the nano-silicon thin film cathode comprises the following steps:

[0067] 1) using a sputtering nickel target to deposit the bottom electrode 1 on the substrate 4, the thickness of which is 200nm;

[0068] 2) Introduce argon and oxygen into the coating chamber so that the partial pressure ratio of argon and oxygen is 5:1 while controlling the total air pressure in the coating chamber to be 0.2Pa, and the temperature of the substrate 4 is controlled at 500°C to The silicon target is used as the sputtering source, and SiO with a thickness of 500 nm is deposited on the bottom electrode 1 with a sputtering power of 160 W. ...

Embodiment 2

[0071] refer to figure 2 As shown, the nano-silicon thin film cathode has a multi-layer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode that are sequentially arranged on a substrate 4 3.

[0072] The fabrication method of the nano-silicon thin film cathode comprises the following steps:

[0073] 1) Depositing the bottom electrode 1 on the substrate 4 with a sputtering aluminum target, the thickness of which is 50 nm;

[0074] 2) Depositing SiO on a silicon target as a sputtering source x During the thin film process, argon and oxygen are introduced into the coating chamber, the total pressure in the coating chamber is controlled at 0.5Pa, and the temperature of the substrate 4 is controlled at 200°C, and the sputtering power of the silicon target is 150W, which is adjusted by time intervals The flow rate of argon and oxygen is such tha...

Embodiment 3

[0077] refer to figure 2 As shown, the nano-silicon thin film cathode has a multi-layer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode that are sequentially arranged on a substrate 4 3.

[0078] The fabrication method of the nano-silicon thin film cathode comprises the following steps:

[0079] 1) using a sputtering chromium target to deposit the bottom electrode 1 on the substrate 4, the thickness of which is 300nm;

[0080] 2) Depositing SiO on a silicon target as a sputtering source x During the thin film process, argon and oxygen are introduced into the coating chamber, the total pressure in the coating chamber is controlled at 1.0Pa, the partial pressure ratio of argon and oxygen is 3:1, and the temperature of the substrate 4 is controlled at 350°C. By adjusting the sputtering power of the silicon target in time intervals, the co...

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Abstract

The invention discloses a nanometer silicon film cathode and a manufacturing method thereof. The nanometer silicon film cathode consists of a bottom electrode, a nanocrystalline silicon-containing silicon dioxide layer (nanocrystalline silicon particles are embedded into silicon dioxide) and a top electrode, which are sequentially manufactured on a substrate, wherein the nanocrystalline silicon-containing silicon dioxide layer is prepared by combining a sputtering method with a high-temperature annealing process. In a preparation process of the nanocrystalline silicon-containing silicon dioxide layer, the partial pressure ratio of argon and oxygen, which are introduced into a coating cavity, or the sputtering power of a silicon target and a silicon dioxide target is regulated to control the sizes and density distribution of the nanocrystalline silicon particles in the nanocrystalline silicon-containing silicon dioxide layer to realize the periodically changing layered distribution of the density of the nanocrystalline silicon particles with proper particle sizes in the nanocrystalline silicon-containing silicon dioxide layer. A manufacturing process for the nanometer silicon film cathode is compatible with a silicon microelectronic processing process, and stable electron emission performance is achieved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, and in particular relates to a nano silicon thin film cathode and a manufacturing method thereof. Background technique [0002] There are many types of cold cathodes, including Spindt type, silicon microtip type, carbon nanotube type, diamond film type, diamond-like film type, porous silicon type and surface conduction electron emission type, metal-insulator (oxide)-metal type and metal-insulator (oxide)-semiconductor-metal type, etc. In order to obtain good electron emission, the cathode material should meet the following basic requirements: low work function, low electron emission turn-on voltage; high and uniform emission current density; high conductivity and melting point; stable surface physical and chemical properties; The material is economical and practical, low in cost and easy to process. [0003] Among many cathode materials, the processing of silicon ma...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14C23C14/10H01J1/30H01J9/02
Inventor 胡文波赵晓磊樊金龙吴胜利张劲涛
Owner XI AN JIAOTONG UNIV
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