Injection reinforced bipolar transistor of insulated gate
A bipolar transistor, injection enhancement technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low carrier concentration, improve carrier concentration, reduce on-resistance, and enhance conductance modulation. effect of effect
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Embodiment 1
[0042] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...
Embodiment 2
[0045] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...
Embodiment 3
[0051] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...
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