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Polycrystal texturing auxiliary and application method thereof

An auxiliary agent and acid velvet technology, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., to achieve the effect of reducing the number of black silk, small velvet size, and improving the photoelectric conversion efficiency of batteries

Inactive Publication Date: 2015-02-04
SUZHOU RUNYANG PHOTOVOLTAIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]The effect of conventional acid texturing is not satisfactory. The main problems are large corrosion pit size, poor uniformity, serious black silk, high reflectivity and surface corrosion. Many defects affect the appearance of the battery and reduce the photoelectric conversion efficiency

Method used

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  • Polycrystal texturing auxiliary and application method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1 is a comparison group example:

[0023] 1) Prepare acidic texturing solution: Add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0024] 2) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

[0025] The reflectance after conventional texturing is 24.0%, from figure 1 It can be seen that the suede with large size and uneven distribution was obtained.

Embodiment 2

[0027] 1) Configure polycrystalline texture-making auxiliary agent: 0.01g perfluorinated nonionic surfactant, 0.05g pentaerythritol, 0.05g citric acid are added into 100ml deionized water and made into polycrystalline texture-making auxiliary agent;

[0028] 2) Prepare acidic texturing solution: add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0029] 3) Add 0.2L auxiliary agent to the acidic texturing solution prepared in step 2);

[0030] 4) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

Embodiment 3

[0032] 1) Obtain the configuration of polycrystalline texturing auxiliary agent: add 5g perfluorinated nonionic surfactant, 5g n-butanol, and 5g citric acid into 100ml deionized water to form polycrystalline texturing auxiliary agent;

[0033] 2) Prepare acidic texturing solution: add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0034] 3) Add 0.05L auxiliary agent to the acidic texturing solution prepared in step 2);

[0035] 4) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

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Abstract

The invention belongs to the field of solar battery manufacturing and particularly relates to a polycrystal texturing auxiliary and an application method thereof. The polycrystal texturing auxiliary comprises the following components: a perfluor nonionic surfactant, polyhydric alcohols, citric acid and the balance of water. The method of applying the auxiliary to perform acid texturing comprises the following steps: (1) preparing the auxiliary for polycrystal silicic acid texturing from the perfluor nonionic surfactant, the polyhydric alcohols, the citric acid and the water; (2), preparing an acid texturing solution from hydrofluoric acid, nitric acid and water; (3) adding the auxiliary into the acid texturing solution prepared in the step (2); and (4) putting a silicon wafer into the acid texturing solution prepared in the step (3) for texturing. After the auxiliary is used, the suede is relatively uniform and relatively small in etching pit, and the reflectance can be reduced by 2-3% in comparison with that of conventional texturing.

Description

Technical field: [0001] The invention relates to an auxiliary agent for acid texturing of polycrystalline silicon wafers and a use method thereof, belonging to the field of polycrystalline silicon texturing for solar cells. [0002] technical background: [0003] In the solar cell manufacturing process, texturing is the beginning of the entire battery manufacturing process. The texturing process plays a significant role in reducing reflectivity, improving light utilization, improving battery appearance and improving photoelectric conversion efficiency. Polycrystalline silicon is Composed of grains with different crystal orientations, if single crystal anisotropic etching is used to make texture, the reflectivity will be higher and the light trapping effect will not be obvious, so the method of acidic isotropic etching is used to reduce the reflectivity. [0004] The texturing effect of conventional acid texturing is not ideal. The main problems are large corrosion pit siz...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
Inventor 陶龙忠李海波杨灼坚张尧
Owner SUZHOU RUNYANG PHOTOVOLTAIC TECH
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