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A kind of growth method of Aln epitaxial layer with high crystal quality

A growth method and technology of crystal quality, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of uneven surface, high dislocation density of AlN epitaxial layers with high crystal quality, etc., and achieve low dislocation density, The method is simple and easy to implement, and the surface is smooth

Active Publication Date: 2017-01-04
北京中博芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The technical problem to be solved by the present invention is that the high crystal quality AlN epitaxial layer prepared by traditional method MOCVD has high dislocation density and uneven surface

Method used

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  • A kind of growth method of Aln epitaxial layer with high crystal quality
  • A kind of growth method of Aln epitaxial layer with high crystal quality
  • A kind of growth method of Aln epitaxial layer with high crystal quality

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preparation example Construction

[0053] The preparation method of the present invention includes several stages such as substrate baking, substrate nitriding, low-temperature deposition of AlN nucleation layer, temperature rise, and high-temperature epitaxial growth of AlN. In order to grow the AlN epitaxial layer with high crystal quality, the technical points of the present invention have three points. One is the introduction of the substrate nitriding process, which modifies the surface of the sapphire substrate to change its microstructure, which is conducive to achieving extremely low screw dislocation density. The second is to use a sapphire substrate with a large inclination angle (choose C off M (or A) 1°-4°). Changing the inclination angle of the substrate can effectively cut the atomic step width of the substrate surface. For example, when the inclination angle changes from 2° to 4°, The step width can be reduced from 37.2nm to 18.6nm, which is far smaller than the step width 372.2nm of the widely u...

Embodiment 1

[0056] 1) Metal-organic chemical vapor deposition (MOCVD) equipment (3×2”Thomas Swan CCS MOCVD), the substrate is a sapphire substrate with C off M 2° (0001) plane, H2 is introduced, and the reaction chamber pressure is 120mbar , bake at 1100°C for 600s, and clean the substrate.

[0057] 2) Lower the temperature to 950°C, pass through ammonia gas for nitriding for 7s, H2 is used as carrier gas, and the pressure of the reaction chamber is 100mbar. And feed trimethylaluminum into the reaction chamber.

[0058] 3) Low-temperature AlN is grown at 950°C, and the growth thickness is 10nm.

[0059] 4) Keep the pressure of the reaction chamber at 100 mbar, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1100° C. in 200 seconds, and stabilize for 20 seconds.

[0060] 5) Feed ammonia gas and trimethylaluminum, keep the reaction chamber pressure at 80 mbar, temperature at 1100° C., V / III molar ratio at 375, high temperature epitaxial growth of AlN...

Embodiment 2

[0065] 1) Metal-organic chemical vapor deposition (MOCVD) equipment (3×2”Aixtron CCS FP-MOCVD), the substrate is a sapphire substrate with C off M 4° (0001) plane, H2 is introduced, and the reaction chamber pressure is 120mbar, bake at 1100°C for 600s, and clean the substrate.

[0066] 2) Lower the temperature to 930° C., pass through ammonia gas for nitriding for 10 seconds, H2 is used as carrier gas, and the pressure of the reaction chamber is 90 mbar. And feed trimethylaluminum into the reaction chamber.

[0067] 3) Low-temperature AlN is grown at 930°C, and the growth thickness is 10nm.

[0068] 4) Keep the pressure of the reaction chamber at 100 mbar, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1000° C. in 100 seconds, and stabilize for 20 seconds.

[0069] 5) Feed ammonia gas and trimethylaluminum, keep the reaction chamber pressure at 60mbar, temperature at 1000°C, V / III molar ratio at 200, high temperature epitaxial growth o...

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Abstract

The invention relates to the technical field of epitaxial layer growth, in particular to a method for growing an ALN ​​epitaxial layer with high crystal quality on a large-tilt-angle sapphire substrate. The growth method uses a large-tilt-angle sapphire substrate, including the following steps: baking the substrate; depositing an AlN nucleation layer at a low temperature; annealing at elevated temperature; high-temperature epitaxial growth of AlN, using the macro-steps caused by the step aggregation effect to reduce the dislocation density; Morphological control, increase the growth rate to modify the surface morphology, and promote the weakening and disappearance of the macro-steps, so as to obtain a flat AlN surface. The invention provides a method for growing AlN epitaxial layer with low dislocation density and smooth surface and high crystal quality. The method of the invention is simple and easy, and does not cause any pollution to the MOCVD system.

Description

technical field [0001] The invention relates to the technical field of epitaxial layer growth, in particular to a method for growing an ALN ​​epitaxial layer with high crystal quality on a large-tilt-angle sapphire substrate. Background technique [0002] In recent years, driven by the huge demand for applications in medical treatment, sterilization, printing, data storage, detection, and secure communication, deep ultraviolet light with high Al composition AlGaN (Al composition greater than 0.4, referred to as high Al-AlGaN) as the core (DUV) light-emitting devices and detectors have attracted people's attention day by day. To develop high-performance DUV light-emitting devices and detectors, AlN substrates and high-crystal-quality AlN templates are one of the key foundations for the realization of the above-mentioned devices, so the preparation methods of the two are extremely important. Since the current commercial AlN single crystal substrate is expensive and difficult ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
Inventor 许福军沈波秦志新王嘉铭张立胜何晨光杨志坚
Owner 北京中博芯半导体科技有限公司
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