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Acid texturing additive for polysilicon film and use method thereof

An acid texturing, polycrystalline silicon wafer technology, applied in the field of polycrystalline silicon texturing of solar cells, achieves the effects of reducing the number of black wires, reducing surface defects, and having strong cleaning ability

Inactive Publication Date: 2015-01-21
SUZHOU RUNYANG PHOTOVOLTAIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]The effect of conventional acid texturing is not satisfactory. The main problems are large corrosion pit size, poor uniformity, serious black silk, high reflectivity and surface corrosion. Many defects affect the appearance of the battery and reduce the photoelectric conversion efficiency

Method used

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  • Acid texturing additive for polysilicon film and use method thereof
  • Acid texturing additive for polysilicon film and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1 is a comparison group example:

[0022] 1) Prepare acidic texturing solution: Add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0023] 2) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

[0024] The reflectance after conventional texturing is 24.0%, which is determined by figure 1 It can be seen that suede with large size and uneven distribution was obtained.

Embodiment 2

[0026] 1) Configure polycrystalline texture additive: 0.01g perfluorinated nonionic surfactant, 0.05g pentaerythritol, 0.05g citric acid are added in 100ml deionized water to make polycrystalline texture additive;

[0027] 2) Prepare acidic texturing solution: add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0028] 3) Add 0.2L additive to the acidic texturing solution prepared in step 2);

[0029] 4) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

Embodiment 3

[0031] 1) Obtain the configuration polycrystalline texture additive: add 5g perfluorinated non-ionic surfactant, 5g n-butanol, 5g citric acid into 100ml deionized water to make polycrystalline texture additive;

[0032] 2) Prepare acidic texturing solution: add 3L of deionized water, 1.5L of hydrofluoric acid with a concentration of 49%, and 5.5L of nitric acid with a concentration of 68-71% into the texturing tank and stir to obtain 10L of acidic texturing liquid;

[0033] 3) Add 0.05L additive to the acidic texturing solution prepared in step 2);

[0034] 4) Texturing: put the solar polysilicon wafer into the texturing tank for texturing, the temperature for texturing is 8°C, and the time for texturing is 80s.

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Abstract

The invention belongs to the field of manufacture of solar batteries, relates to an acid texturing additive for a polysilicon film and a use method thereof, and the additive comprises the components of a perfluorinated nonionic surfactant, polyalcohol, citric acids and the balance of water. A method for acid texturing by using the additive comprises the following steps: (1) preparing the perfluorinated nonionic surfactant, the polyalcohol, the citric acids and the water to obtain the acid texturing additive for the polysilicon; (2) preparing hydrofluoric acids, nitric acids and the water to obtain an acid texturing solution; (3) adding the additive into the acid texturing solution which is obtained in the step (2); and (4) putting a silicon film into the acid texturing solution which is obtained in the step (3) for texturing. Through the use of the additive, a texturing surface is more uniform, an etch pit is finer, and compared with the conventional texturing, the reflectivity can be reduced by 2-3%.

Description

Technical field: [0001] The invention relates to an additive for acid texturing of polycrystalline silicon sheets and a use method thereof, belonging to the field of polycrystalline silicon texturing for solar cells. [0002] technical background: [0003] In the solar cell manufacturing process, texturing is the beginning of the entire battery manufacturing process. The texturing process plays a significant role in reducing reflectivity, improving light utilization, improving battery appearance and improving photoelectric conversion efficiency. Polycrystalline silicon is Composed of grains with different crystal orientations, if single crystal anisotropic etching is used to make texture, the reflectivity will be higher and the light trapping effect will not be obvious, so the method of acidic isotropic etching is used to reduce the reflectivity. [0004] The texturing effect of conventional acid texturing is not ideal. The main problems are large corrosion pit size, poor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
Inventor 陶龙忠李海波杨灼坚张尧
Owner SUZHOU RUNYANG PHOTOVOLTAIC TECH
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